- 您现在的位置：买卖IC网 > Datasheet目录617 > CM50MX-24A (Powerex Inc)CIB MOD 1200V 50A NX SER Datasheet资料下载
参数资料
| 型号： | CM50MX-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | CIB MOD 1200V 50A NX SER |
| 标准包装： | 2 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，50A |
| 电流 - 集电极 (Ic)（最大）： | 50A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 8.5nF @ 10V |
| 功率 - 最大： | 355W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM50MX-24A
NX-Series CIB Module
(3? Converter + 3? Inverter + Brake)
50 Amperes/1200 Volts
Electrical Characteristics, T j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Symbol
I CES
I GES
V GE(th)
V CE(sat)
C ies
C oes
C res
Q G
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 5mA, V CE = 10V
T j = 25°C, I C = 50A, V GE = 15V *5
15V *5
T j = 125°C, I C = 50A, V GE =
I C = 50A, V GE = 15V, Chip
V CE = 10V, V GE = 0V
V CC = 600V, I C = 50A, V GE = 15V
Min.
—
—
6
—
—
—
—
—
—
—
Typ.
—
—
7
2.0
2.2
1.9
—
—
—
250
Max.
1.0
0.5
8
2.6
—
—
8.5
0.75
0.17
—
Units
mA
μA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
Inductive
Turn-on Delay Time
t d(on)
—
—
100
ns
Load
Switch
Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
t r
t d(off)
t f
V CC = 600V, I C = 50A, V GE = ± 1 5V,
R G = 6.2?, Inductive Load
—
—
—
—
—
—
50
300
600
ns
ns
ns
V EC
Emitter-CollectorVoltage
*1
T j = 25°C, I E = 50A, V GE =
0V *5
—
2.6
3.4
Volts
T j = 125°C, I E = 50A, V GE = 0V *5
I E = 50A, V GE = 0V, Chip
—
—
2.16
2.5
—
—
Volts
Volts
Q rr
Reverse RecoveryTime
Reverse Recovery Charge
Internal Gate Resistance
External Gate Resistance
t rr *1
*1
r g
R G
V CC = 600V, I E = 50A, V GE = ±15V
R G = 6.2?, Inductive Load
T C = 25°C, Per Switch
—
—
—
6.0
—
2.0
0
—
200
—
—
62
ns
μC
?
?
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Rev. 11/11
3
相关PDF资料 |
PDF描述 |
|---|---|
| CM50RL-24NF | IGBT MOD 7PAC 1200V 50A NF SER |
| CM50TF-12H | IGBT MOD 6PAC 600V 50A H SER |
| CM50TF-24H | IGBT MOD 6PAC 1200V 50A H SER |
| CM50TF-28H | IGBT MOD 6PAC 1400V 50A H SER |
| CM50TL-24NF | IGBT MOD 6PAC 1200V 50A NF SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM50MX-24A_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM50MXA-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD CIB 50A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 50A, Transistor Polarity:N Channel, DC Collector Current:50A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:425W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES CIB 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM50RL-24NF | 功能描述:IGBT MOD 7PAC 1200V 50A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM50RL-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM50TF12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
发布紧急采购，3分钟左右您将得到回复。