参数资料
型号: CM50TF-28H
厂商: POWEREX INC
元件分类: IGBT 晶体管
英文描述: 122 x 32 pixel format, LED Backlight available
中文描述: 50 A, 1400 V, N-CHANNEL IGBT
文件页数: 1/4页
文件大小: 67K
代理商: CM50TF-28H
347
Six-IGBT IGBTMOD
H-Series Module
50 Amperes/1400 Volts
CM50TF-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dimensions
A
Inches
4.02
±
0.02
3.58
±
0.02
3.150
±
0.01
2.913
±
0.01
Millimeters
102.0
±
0.5
91.0
±
0.5
80.0
±
0.25
74.0
±
0.25
B
C
D
E
1.69
43.0
F
1.18 +0.06/-0.02 30 +1.5/-0.5
G
1.18
30.0
H
1.16
29.5
J
1.06
27.0
K
0.96
24.5
L
0.87
22.0
M
0.79
20.0
N
0.67
17.0
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-28H
is a 1400V (V
CES
), 50 Ampere
Six-IGBT IGBTMOD Power
Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
50
28
Outline Drawing and Circuit Diagram
AB
F
H
V
.110 TAB
C
X
L
E
A
G
N
D
U
W
AA
L
B
P
G
K
J
T
R
M
M
AA
S
X
Q
Q
X
N
Z - M4 THD
(7 TYP.)
Y DIA. (4 TYP.)
B
u
P E
u
P
B
v
P E
v
P
B
w
P E
w
P
B
u
N E
u
N
B
v
N E
v
N
B
w
N E
w
N
P
P
N
N
U
V
W
P
BuP
EuP
BuN
EuN
u
BvP
EvP
v
BvN
EvN
BwP
EwP
w
BwN
EwN
P
N
N
Dimensions
P
Inches
0.65
Millimeters
16.5
Q
0.55
14.0
R
0.47
12.0
S
0.43
11.0
T
0.39
10.0
U
0.33
8.5
V
0.32
8.1
W
0.24 Rad.
Rad. 6.0
X
0.24
6.0
Y
0.22 Dia.
Dia. 5.5
Z
M4 Metric
M4
AA
0.08
2.0
AB
0.28
7.0
相关PDF资料
PDF描述
CM50TJ-24F 128 x 64 pixel format, LED or EL Backlight available
CM50TU-34KA RN55D, +/-100 ppm, 47.0 kOhm, +/-1 %
CM520813 SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
CM521213 SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/1200-1600 Volts
CM521613 SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/1200-1600 Volts
相关代理商/技术参数
参数描述
CM50TJ-24F 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
CM50TL-24NF 功能描述:IGBT MOD 6PAC 1200V 50A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM50TU-24F 功能描述:IGBT MOD 6PAC 1200V 50A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM50TU-24F_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM50TU-24H 功能描述:IGBT MOD 6PAC 1200V 50A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B