- 您现在的位置：买卖IC网 > PDF目录381676 > CM50TF-28H (POWEREX INC) 122 x 32 pixel format, LED Backlight available PDF资料下载
参数资料
| 型号： | CM50TF-28H |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 122 x 32 pixel format, LED Backlight available |
| 中文描述： | 50 A, 1400 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 67K |
| 代理商： | CM50TF-28H |
348
CM50TF-28H
Six-IGBT IGBTMOD H-Series Module
50 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
CM50TF-28H
Units
°
C
°
C
Junction Temperature
T
j
–40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
EC
I
ECM
P
d
–
–40 to 125
Collector-Emitter Voltage (G-E-SHORT)
1400
Volts
Gate-Emitter Voltage (C-E-SHORT)
±
20
50
Volts
Collector Current
Amperes
Peak Collector Current
100*
Amperes
Diode Forward Current
50
Amperes
Diode Forward Pulse Current
100*
Amperes
Power Dissipation
400
Watts
Max. Mounting Torque M4 Terminal Screws
13
in-lb
Max. Mounting Torque M5 Mounting Screws
–
17
in-lb
Module Weight (Typical)
–
540
Grams
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
V
RMS
2500
Volts
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 5mA, V
CE
= 10V
I
C
= 50A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V, T
j
= 150
°
C
V
CC
= 800V, I
C
= 50A, V
GS
= 15V
I
E
= 50A, V
GS
= 0V
–
–
1.0
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
–
3.1
4.2**
Volts
–
2.95
–
Volts
Total Gate Charge
Q
G
V
FM
–
255
–
nC
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
–
–
3.8
Volts
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
10
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V, f = 1MHz
–
–
3.5
nF
Reverse Transfer Capacitance
–
–
2
nF
Resistive
Turn-on Delay Time
–
–
100
ns
Load
Rise Time
V
CC
= 800V, I
C
= 50A,
V
GE1
= V
GE2
= 15V, R
G
= 6.3
–
–
250
ns
Switch
Turn-off Delay Time
–
–
150
ns
Time
Fall Time
–
–
500
ns
Diode Reverse Recovery Time
I
E
= 50A, di
E
/dt = –100A/
μ
s
I
E
= 50A, di
E
/dt = –100A/
μ
s
–
–
300
ns
Diode Reverse Recovery Charge
–
0.5
–
μ
C
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.31
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.70
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
–
0.033
相关PDF资料 |
PDF描述 |
|---|---|
| CM50TJ-24F | 128 x 64 pixel format, LED or EL Backlight available |
| CM50TU-34KA | RN55D, +/-100 ppm, 47.0 kOhm, +/-1 % |
| CM520813 | SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts |
| CM521213 | SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/1200-1600 Volts |
| CM521613 | SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/1200-1600 Volts |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM50TJ-24F | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts |
| CM50TL-24NF | 功能描述:IGBT MOD 6PAC 1200V 50A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM50TU-24F | 功能描述:IGBT MOD 6PAC 1200V 50A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM50TU-24F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM50TU-24H | 功能描述:IGBT MOD 6PAC 1200V 50A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
发布紧急采购，3分钟左右您将得到回复。