参数资料
型号: CM50TU-24F
厂商: Powerex Inc
文件页数: 1/4页
文件大小: 0K
描述: IGBT MOD 6PAC 1200V 50A F SER
标准包装: 2
系列: IGBTMOD™
IGBT 类型: 沟道
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,50A
电流 - 集电极 (Ic)(最大): 50A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 20nF @ 10V
功率 - 最大: 320W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
CM50TU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Six IGBTMOD?
50 Amperes/1200 Volts
S - NUTS (5 TYP)
K
J
K
R
T (4 TYP.)
CM
N
P
P
GUP EUP
GVP EVP
GWP EWP
B E
L
N
L
N
L
M
Q
TC
GUN EUN
GVN EVN
GWN EWN
TC
MEASURING
MEASURING
POINT
U
V
W
POINT
Description:
L
J
N
D
A
J
L
N
L
V
Powerex IGBTMOD? Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
W - THICK x X - WIDE
TAB (12 PLACES)
C
P
F
H
G
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
GUP
EUP
GUN
EUN
RTC
U
RTC
GVP
EVP
GVN
EVN
RTC
V
RTC
GWP
EWP
GWN
EWN
RTC
W
RTC
A
Features:
□ Low Drive Power
Low V CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
N
Applications:
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
Dimensions
Inches
Millimeters
□ AC Motor Control
UPS
□ Battery Powered Supplies
A
4.02
102.0
M
0.47
11.85
Ordering Information:
B
C
D
E
3.58 91.0
1.14 +0.04/-0.02 29.0 +1.0/-0.5
3.15 ± 0.01 80.0 ± 0.25
2.91 ± 0.01 74.0 ± 0.25
N
P
Q
R
0.75
0.74
1.55
0.05
19.1
18.7
39.3
1.25
Example: Select the complete
module number you desire from
the table - i.e. CM50TU-24F is a
1200V (V CES ), 50 Ampere Six-
IGBT IGBTMOD? Power Module.
F
G
H
0.16
1.02
0.31
4.0
26.0
8.1
S
T
U
M4
0.2 2 Dia.
0.02
M4
5.5 Dia.
0.5
Type
CM
Current Rating
Amperes
50
V CES
Volts (x 50)
24
J
K
L
0.79
0.39
0.43
20.0
10.0
11.0
V
W
X
0.12
0.02
0.110
3.05
0.5
2.79
1
相关PDF资料
PDF描述
CM50TU-24H IGBT MOD 6PAC 1200V 50A U SER
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CM600DU-24F IGBT MOD DUAL 1200V 600A F SER
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CM600DU-24NF IGBT MOD DUAL 1200V 600A NF SER
相关代理商/技术参数
参数描述
CM50TU-24F_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM50TU-24H 功能描述:IGBT MOD 6PAC 1200V 50A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM50TU-24H_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50TU-34KA 功能描述:IGBT MOD 6PAC 1700V 50A KA SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM50TU-34KA_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE