参数资料
型号: CM600DU-5F
厂商: Powerex Inc
文件页数: 3/4页
文件大小: 0K
描述: IGBT MOD DUAL 250V 600A F SER
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 250V
Vge, Ic时的最大Vce(开): 1.7V @ 10V,600A
电流 - 集电极 (Ic)(最大): 600A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 170nF @ 10V
功率 - 最大: 1100W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-5F
Dual IGBTMOD ? F-Series Module
600 Amperes/250 Volts
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Thermal Resistance, Junction to Case
Symbol
R th(j-c) Q
R th(j-c) R
R th(c-f)
R th(j-c') Q
Test Conditions
Per IGBT 1/2 Module
Per FWDi 1/2 Module
Per Module, Thermal Grease Applied
Per IGBT 1/2 Module
Min.
Typ.
0.020
Max.
0.11
0.20
0.05
Units
° C/W
° C/W
° C/W
° C/W
T C Reference Point Under Chip
COLLECTOR-EMITTER
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
TRANSFER CHARACTERISTICS
(TYPICAL)
2.0
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
900
V GE = 15V
10
8
6.5
6.25
T j = 25 o C
900
V CE = 10V
T j = 25 ° C
T j = 125 ° C
1.6
V GE = 15V
T j = 25 ° C
T j = 125 ° C
6
1.2
600
5.75
600
0.8
5.5
300
5.25
5
300
0.4
0
0
0
0
1
2
3
4
5
0
2
4
6
8
10
0
400
800
1200
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-CURRENT, I C , (AMPERES)
CAPACITANCE VS. V CE
(TYPICAL)
10
T j = 25 ° C
10 4
T j = 25 ° C
10 3
8
6
10 3
10 2
C ies
4
10 2
10 1
2
I C = 1200 A
I C = 600A
C oes
V GE = 0V
0
0
4
8
I C = 240A
12
16
20
10 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
f = 1MHz
10 0
10 -1
10 0
10 1
C res
10 2
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
3
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