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| 型号： | CM600DY-12NF |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 600V 600A NF SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 90nF @ 10V |
| 功率 - 最大： | 1130W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1023 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF
Dual IGBTMOD? NF-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T C′ = 89°C)
Peak Collector Current
Emitter Current** (T C = 25°C)
Emitter Surge Current**
Maximum Collector Dissipation (T C = 25°C, T j ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P C
—
—
—
V ISO
CM600DY-12NF
–40 to 150
–40 to 125
600
±20
600
1200*
600
1200*
1130
40
40
580
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 60mA, V CE = 10V
I C = 600A, V GE = 15V, T j = 25°C
I C = 600A, V GE = 15V, T j = 125°C
V CC = 300V, I C = 600A, V GE = 15V
I E = 600A, V GE = 0V
Min.
—
—
5.0
—
—
—
—
Typ.
—
—
6.0
1.7
1.7
2400
—
Max.
1.0
0.5
7.5
2.2
—
—
2.6
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
—
—
—
Typ.
—
—
—
Max.
90
11.0
3.6
Units
nf
nf
nf
Inductive
Turn-on Delay Time
t d(on)
—
—
500
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
V CC = 300V, I C = 600A,
V GE1 = V GE2 = 15V, R G = 4.2Ω,
Inductive Load
—
—
—
—
—
—
300
750
300
ns
ns
ns
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t rr
Q rr
Switching Operation,
I E = 600A
—
—
—
8.7
250
—
ns
μC
*Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T C′ measured point is just under the chips. If this value is used, R th(f-a) should be measured just under the chips.
2
Rev. 09/09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600DY-12NF_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM600DY-12NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600DY-24A | 功能描述:IGBT MOD DUAL 1200V 600A A SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM600DY-24A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600DY-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT HALF BRIDGE 1200V 600A MOD 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 600A; Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:4.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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