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参数资料
| 型号： | CM600DY-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 600A A SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 94nF @ 10V |
| 功率 - 最大： | 3670W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1024 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600DY-24A
Dual IGBTMOD? A-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
Symbol
R th(j-c) Q
R th(j-c) D
R th(c-f)
R G
Test Conditions
Per IGBT 1/2 Module
Per FWDi 1/2 Module
Per 1/2 Module, Thermal Grease Applied
Min.
—
—
—
0.52
Typ.
—
—
0.018
—
Max.
0.034
0.062
—
7.8
Units
°C/W
°C/W
°C/W
Ω
*T C , T f measured point is just under the chips.
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1200
900
V GE =
20V
13
15
T j = 25°C
12
4
3
V GE = 15V
T j = 25°C
T j = 125°C
10
8
T j = 25°C
I C = 1200A
600
11
2
6
4
I C = 240A
I C = 600A
300
10
1
2
9
0
0
2
4
6
8
10
0
0
300
600
900
1200
0
6
8
10
12
14
16
18
20
CAPACITANCE VS. VCE
10 4
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10 3
COLLECTOR-CURRENT, I C , (AMPERES)
(TYPICAL)
10 3
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t d(on)
t d(off)
10 3
10 2
C ies
t f
10 1
C oes
10 2
t r
10 2
10 1
0
1
2
3
T j = 25°C
T j = 125°C
4
5
10 0
V GE = 0V
10 -1
10 -1
10 0
C res
10 1
10 2
10 1
10 1
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 125°C
Inductive Load
10 3
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
Rev. 11/07
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR CURRENT, I C , (AMPERES)
3
相关PDF资料 |
PDF描述 |
|---|---|
| CM600HA-12H | IGBT MOD SGL 600V 600A H SER |
| CM600HA-24A | IGBT MOD SGL 1200V 600A A SERIES |
| CM600HA-24H | IGBT MOD SGL 1200V 600A H SER |
| CM600HA-28H | IGBT MOD SGL 1400V 600A H SER |
| CM600HA-5F | IGBT MOD SGL 250V 600A F SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600DY-24A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600DY-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT HALF BRIDGE 1200V 600A MOD 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 600A; Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:4.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600DY-34H | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600DY-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E2Y34H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) |
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