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参数资料
| 型号： | CM600DY-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 600A A SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 94nF @ 10V |
| 功率 - 最大： | 3670W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1024 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM600DY-24A
Dual IGBTMOD? A-Series Module
600 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
10 3
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 25°C
Inductive Load
10 3
10 2
20
15
10
I C = 600A
V CC = 400V
V CC = 600V
10 3
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 125°C
Inductive Load
C Snubber at Bus
5
10 1
10 1
10 2
I rr
t rr
10 1
10 3
0
0
1000
2000
3000
4000
10 1
10 1
10 2
E SW(on)
E SW(off)
10 3
EMITTER CURRENT, I E , (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
GATE CHARGE, Q G , (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
COLLECTOR CURRENT, I C , (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10 3
V CC = 600V
V GE = 15V
I C = 600A
T j = 125°C
Inductive Load
C Snubber at Bus
10 2
E rr
10 2
V CC = 600V
V GE = 15V
I C = 600A
T j = 125°C
Inductive Load
C Snubber at Bus
10 2
10 1
10 1
10 1
10 -1
10 0
E SW(on)
E SW(off)
10 1
10 0
10 1
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 125°C
Inductive Load
C Snubber at Bus
10 3
10 0
10 -1
E rr
10 0
10 1
GATE RESISTANCE, R G , ( ? )
EMITTER CURRENT, I E , (AMPERES)
GATE RESISTANCE, R G , ( ? )
10 0
10 -3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 -2 10 -1 10 0
10 1
10 -1
10 -2
Single Pulse
T C = 25°C
Per Unit Base =
R th(j-c) =
0.034°C/W
(IGBT)
R th(j-c) =
0.062°C/W
(FWDi)
10 -1
10 -2
10 -3
10 -5
10 -4
10 -3
10 -3
TIME, (s)
4
Rev. 11/07
相关PDF资料 |
PDF描述 |
|---|---|
| CM600HA-12H | IGBT MOD SGL 600V 600A H SER |
| CM600HA-24A | IGBT MOD SGL 1200V 600A A SERIES |
| CM600HA-24H | IGBT MOD SGL 1200V 600A H SER |
| CM600HA-28H | IGBT MOD SGL 1400V 600A H SER |
| CM600HA-5F | IGBT MOD SGL 250V 600A F SER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600DY-24A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM600DY-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT HALF BRIDGE 1200V 600A MOD 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 600A; Transistor Polarity:Dual N Channel; DC Collector Current:600A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:4.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600DY-34H | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600DY-34H_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600E2Y34H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 600A I(C) |
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