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| 型号： | CM600HB-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SGL 1200V 600A A SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 105nF @ 10V |
| 功率 - 最大： | 3670W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600HB-24A
Single IGBTMOD? A-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
IE*
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 80°C)* 4
Peak Collector Current (Pulse, Repetitive)* 2
Maximum Collector Dissipation (TC = 25°C)* 2, * 4
Emitter Current (TC = 25°C)
Peak Emitter Current (Pulse, Repetitive)* 2
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 G(E) Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
PC
1
IEM* 1
—
—
—
—
VISO
CM600HB-24A
–40 to 150
–40 to 125
1200
±20
600
1200
3670
600
1200
95
26
13
560
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
VEC*
IE = 600A, VGE = 0V*
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
1
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 60mA, VCE = 10V
IC = 600A, VGE = 15V, Tj = 25°C* 3
IC = 600A, VGE = 15V, Tj = 125°C* 3
VCC = 600V, IC = 600A, VGE = 15V
3
Min.
—
—
6.0
—
—
—
—
Typ.
—
—
7.0
2.1
2.4
3000
—
Max.
1.0
1.5
8.0
3.0
—
—
3.8
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Cies
Coes
Cres
Test Conditions
VCE = 10V, VGE = 0V
Min.
—
—
—
Typ.
—
—
—
Max.
105
9
2.0
Units
nf
nf
nf
Inductive
Turn-on Delay Time
td(on)
—
—
660
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
VCC = 600V, IC = 600A,
VGE1 = VGE2 = 15V, RG = 0.52 Ω ,
Inductive Load
—
—
—
—
—
—
190
700
350
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr* 1
Qrr* 1
Switching Operation,
IE = 600A
—
—
—
19.0
250
—
ns
μC
2
*1
*2
*3
*4
Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
01/10 Rev. 1
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