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参数资料
| 型号： | CM600HB-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD SGL 1200V 600A A SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，600A |
| 电流 - 集电极 (Ic)（最大）： | 600A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 105nF @ 10V |
| 功率 - 最大： | 3670W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600HB-24A
Single IGBTMOD? A-Series Module
600 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
10 3
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 25°C
Inductive Load
20
16
12
I C = 600A
V CC = 400V
V CC = 600V
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 125°C
Inductive Load
C Snubber at Bus
10 2
8
10 1
I rr
t rr
4
E SW(on)
E SW(off)
10 1
10 1
10 2
10 3
0
0
900
1800
2700
3600
4500
10 0
10 1
10 2
10 3
EMITTER CURRENT, I E , (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
GATE CHARGE, Q G , (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
COLLECTOR CURRENT, I C , (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10 3
10 2
V CC = 600V
V GE = 15V
I C = 600A
T j = 125°C
Inductive Load
C Snubber at Bus
10 2
10 1
E rr
10 2
10 1
E rr
10 1
10 -1
10 0
E SW(on)
E SW(off)
10 1
10 0
10 1
10 2
V CC = 600V
V GE = 15V
R G = 0.52 ?
T j = 125°C
Inductive Load
C Snubber at Bus
10 3
V CC = 600V
V GE = 15V
I C = 600A
T j = 125°C
Inductive Load
C Snubber at Bus
10 0
10 -1
10 0
10 1
GATE RESISTANCE, R G , ( ? )
EMITTER CURRENT, I E , (AMPERES)
GATE RESISTANCE, R G , ()
10 0
10 -3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 -2 10 -1 10 0
10 1
10 -1
10 -2
Single Pulse
T C = 25°C
Per Unit Base =
R th(j-c) =
0.034°C/W
(IGBT)
R th(j-c) =
0.051°C/W
(FWDi)
10 -1
10 -2
10 -3
10 -5
10 -4
10 -3
10 -3
TIME, (s)
4
01/10 Rev. 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM600HB-90H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600HB-90H_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HG-130H | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM600HG-90H | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM600HN-5F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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