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参数资料
| 型号： | CM75DY-34A |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1700V 75A A SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1700V |
| Vge, Ic时的最大Vce（开）： | 2.8V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 18.5nF @ 10V |
| 功率 - 最大： | 780W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75DY-34A
Dual IGBTMOD? A-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Emitter Current (TC = 25°C)*
I E*
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 111°C)* 4
Peak Collector Current (Pulse, Repetitive)* 2
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)* 2, * 4
2
Peak Emitter Current (Pulse, Repetitive)* 2
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
PC
1
IEM* 1
—
—
—
VISO
CM75DY-34A
–40 to 150
–40 to 125
1700
±20
75
150
780
75
150
30
40
310
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC* 1
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V, Tj = 25°C* 3
IC = 75A, VGE = 15V, Tj = 125°C* 3
VCC = 1000V, IC = 75A, VGE = 15V
IE = 75A, VGE = 0V* 3
Min.
—
—
5.5
—
—
—
—
Typ.
—
—
7.0
2.2
2.45
500
—
Max.
1.0
2.0
8.5
2.8
—
—
3.0
Units
mA
μA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Cies
Coes
Cres
Test Conditions
VCE = 10V, VGE = 0V
Min.
—
—
—
Typ.
—
—
—
Max.
18.5
2.1
0.4
Units
nf
nf
nf
Inductive
Turn-on Delay Time
td(on)
—
—
200
ns
Load
Switch
Time
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
VCC = 1000V, IC = 75A,
VGE1 = VGE2 = 15V, RG = 6.4 Ω ,
Inductive Load
—
—
—
—
—
—
150
550
350
ns
ns
ns
trr*
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
1
Qrr* 1
Switching Operation,
IE = 75A
—
—
—
7.5
300
—
ns
μC
2
*1
*2
*3
*4
Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
01/10 Rev. 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75DY-34A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM75DY-34A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3U-12H | 功能描述:IGBT MOD CHOP 600V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75E3U-12H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3U-24F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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