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参数资料
| 型号： | CM75DY-34A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1700V 75A A SER |
| 标准包装： | 2 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1700V |
| Vge, Ic时的最大Vce（开）： | 2.8V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 75A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 18.5nF @ 10V |
| 功率 - 最大： | 780W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75DY-34A
Dual IGBTMOD? A-Series Module
75 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Per IGBT 1/2 Module*
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
RG
Test Conditions
4
Per FWDi 1/2 Module* 4
Thermal Grease Applied* 4, * 5
Min.
—
—
—
6.4
Typ.
—
—
—
—
Max.
0.16
0.29
—
64
Units
°C/W
°C/W
°C/W
Ω
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m ? K)].
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
V GE =
20V
13
15
12
T j = 25 o C
5
4
V CE = 15V
T j = 25°C
T j = 125°C
150
V GE = 10V
T j = 25°C
T j = 125°C
100
50
11
10
3
2
100
50
1
8
9
0
0
2
4
6
8
10
0
0
50
100
150
0
0
4
8
12
16
20
CAPACITANCE VS. VCE
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-CURRENT, I C , (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
(TYPICAL)
10
8
6
T j = 25°C
I C = 150A
I C = 75A
10 3
10 2
10 2
10 1
V GE = 0V
C ies
4
2
I C = 30A
10 1
T j = 25°C
T j = 125°C
10 0
10 -1
C oes
C res
0
0
4
8
12
16
20
10 0
0
1
2
3
4
10 -2
10 -1
10 0
10 1
10 2
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
01/10 Rev. 1
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75DY-34A_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM75DY-34A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3U-12H | 功能描述:IGBT MOD CHOP 600V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM75E3U-12H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM75E3U-24F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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