参数资料
型号: CM75TU-12F
厂商: Powerex Inc
文件页数: 2/4页
文件大小: 0K
描述: IGBT MOD 6PAC 600V 75A F SER
标准包装: 2
系列: IGBTMOD™
IGBT 类型: 沟道
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.2V @ 15V,75A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 20nF @ 10V
功率 - 最大: 290W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMOD ?
75 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25 ° C)
Peak Collector Current (T j ≤ 150 ° C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T j < 150 ° C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P c
V iso
CM75TU-12F
-40 to 150
-40 to 125
600
± 20
75
150*
75
150*
290
15
31
570
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V CES , V CE = 0V
I C = 7.5mA, V CE = 10V
I C = 75A, V GE = 15V, T j = 25 ° C
I C = 75A, V GE = 15V, T j = 125 ° C
V CC = 300V, I C = 75A, V GE = 15V
I E = 75A, V GE = 0V
Min.
5
Typ.
6
1.6
1.6
465
Max.
1
20
7
2.2
2.6
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
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PDF描述
CM75TU-12H IGBT MOD 6PAC 600V 75A U SER
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相关代理商/技术参数
参数描述
CM75TU-12F_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM75TU-12H 功能描述:IGBT MOD 6PAC 600V 75A U SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM75TU-12H_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM75TU-24F 功能描述:IGBT MOD 6PAC 1200V 75A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
CM75TU-24F_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE