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参数资料
| 型号： | CM75TU-34KA |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Six IGBTMOD 75 Amperes/1700 Volts |
| 中文描述： | 75 A, 1700 V, N-CHANNEL IGBT |
| 文件页数： | 2/4页 |
| 文件大小： | 474K |
| 代理商： | CM75TU-34KA |
2
CM75TU-34KA
Six IGBTMOD KA-Series Module
75 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
CM75TU-34KA
Units
°
C
°
C
Junction Temperature
T
j
-40 to 150
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
Collector-Emitter Voltage (G-E SHORT)
1700
Volts
Gate-Emitter Voltage (C-E SHORT)
±
20
Volts
Collector Current (T
c
= 25
°
C)
Peak Collector Current (T
j
≤
150
°
C)
Emitter Current** (T
c
= 25
°
C)
Peak Emitter Current**
75
Amperes
150*
Amperes
75
Amperes
150*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C)
Mounting Torque, M5 Main Terminal
660
Watts
31
in-lb
Mounting Torque, M5 Mounting
–
31
in-lb
Weight
–
680
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
3500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 7.5mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V, T
j
= 25
°
C
I
C
= 75A, V
GE
= 15V, T
j
= 125
°
C
V
CC
= 1000V, I
C
= 75A, V
GE
= 15V
I
E
= 75A, V
GE
= 0V, T
j
= 25
°
C
I
E
= 75A, V
GE
= 0V, T
j
= 125
°
C
–
–
1
mA
Gate Leakage Current
–
–
0.5
μ
A
Gate-Emitter Threshold Voltage
4.0
5.5
7.0
Volts
Collector-Emitter Saturation Voltage
–
3.2
4.0
Volts
–
3.8
–
Volts
Total Gate Charge
Q
G
V
EC
–
340
–
nC
Emitter-Collector Voltage*
–
–
4.6
Volts
–
2.2
–
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
–
–
10.5
nf
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
1.8
nf
Reverse Transfer Capacitance
–
–
0.55
nf
Resistive
Turn-on Delay Time
V
CC
= 1000V, I
C
= 75A,
V
GE1
= V
GE2
= 15V,
R
G
= 4.2 , Resistive
Inductive Load
–
–
100
ns
Load
Rise Time
–
–
100
ns
Switch
Turn-off Delay Time
–
–
400
ns
Times
Fall Time
–
–
800
ns
Diode Reverse Recovery Time
Switching Operation
–
–
200
ns
Diode Reverse Recovery Charge
I
E
= 75A
–
5.3
–
μ
C
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