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参数资料
| 型号： | CM75TU-34KA |
| 厂商： | POWEREX INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Six IGBTMOD 75 Amperes/1700 Volts |
| 中文描述： | 75 A, 1700 V, N-CHANNEL IGBT |
| 文件页数： | 4/4页 |
| 文件大小： | 474K |
| 代理商： | CM75TU-34KA |
4
CM75TU-34KA
Six IGBTMOD KA-Series Module
75 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
t
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
0
10
1
Single Pulse
T
= 25
°
C
Per Unit Base = R
th(j-c)
= 0.19
°
C/W
Z
t
t
10
-1
10
-2
10
-3
TIME, (s)
t
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
0
10
1
10
-1
10
-2
10
-3
Single Pulse
T
= 25
°
C
Per Unit Base = R
th(j-c)
= 0.35
°
C/W
Z
t
t
10
4
10
2
10
1
10
0
10
3
GATE CHARGE, Q
G
, (nC)
G
G
,
GATE CHARGE, V
GE
20
0
100
200
16
12
8
4
0
300
500
V
CC
= 1000V
400
V
CC
= 800V
I
C
= 75A
EMITTER CURRENT, I
E
, (AMPERES)
R
r
,
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
V
CC
= 1000V
V
GE
=
±
15V
R
G
= 4.2
T
= 25
°
C
INDUCTIVE
LOAD
10
2
10
1
10
0
r
,
COLLECTOR CURRENT, I
C
, (AMPERES)
10
1
10
0
10
2
t
d(off)
t
d(on)
t
r
V
CC
= 1000V
V
GE
=
±
15V
R
G
= 4.2
T
j
= 125
°
C
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
相关PDF资料 |
PDF描述 |
|---|---|
| CM800DU-12H | Dual IGBTMOD 800 Amperes/600 Volts |
| CM800DZ-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HA-28H | Single IGBTMOD 800 Amperes/1400 Volts |
| CM800HA-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM800HB-50H | HIGH POWER SWITCHING USE INSULATED TYPE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CM75TU-34KA_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM75TX-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE 6-PAC 75A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES 6-PAC 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 75A, Transistor Polarity:Six N Channel, DC Collector Current:75A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:600W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM75YE13-12F | 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM7603-000 | 制造商:TE Connectivity 功能描述:55A1814-24-69-6 |
| CM7606-000 | 制造商:TE Connectivity 功能描述:55A1824-24-6/9-6 - Cable Rools/Shrink Tubing |
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