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参数资料
型号： CM75TU-34KA
厂商： Powerex Inc
文件页数： 2/4页
文件大小： 0K
描述： IGBT MOD 6PAC 1700V 75A KA SER
标准包装： 1
系列： IGBTMOD™
配置： 三相反相器
电压 - 集电极发射极击穿（最大）： 1700V
Vge, Ic时的最大Vce（开）： 4V @ 15V，75A
电流 - 集电极 (Ic)（最大）： 75A
电流 - 集电极截止（最大）： 1mA
Vce 时的输入电容 (Cies)： 10.5nF @ 10V
功率 - 最大： 660W
输入： 标准
NTC 热敏电阻： 无
安装类型： 底座安装
封装/外壳： 模块
供应商设备封装： 模块
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-34KA
Six IGBTMOD? KA-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25 ° C)
Peak Collector Current (T j ≤ 150 ° C)
Emitter Current** (T c = 25 ° C)
Peak Emitter Current**
Maximum Collector Dissipation (T c = 25 ° C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P c
–
–
–
V iso
CM75TU-34KA
-40 to 150
-40 to 125
1700
± 20
75
150*
75
150*
660
31
31
680
3500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 7.5mA, V CE = 10V
I C = 75A, V GE = 15V, T j = 25 ° C
I C = 75A, V GE = 15V, T j = 125 ° C
V CC = 1000V, I C = 75A, V GE = 15V
I E = 75A, V GE = 0V, T j = 25 ° C
I E = 75A, V GE = 0V, T j = 125 ° C
Min.
–
–
4.0
–
–
–
–
–
Typ.
–
–
5.5
3.2
3.8
340
–
2.2
Max.
1
0.5
7.0
4.0
–
–
4.6
–
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
10.5
1.8
0.55
Units
nf
nf
nf
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 1000V, I C = 75A,
V GE1 = V GE2 = 15V,
R G = 4.2 , Resistive
Inductive Load
–
–
–
–
–
–
–
–
100
100
400
800
ns
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
Switching Operation
I E = 75A
–
–
–
5.3
200
–
ns
μ C
2
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