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参数资料
| 型号： | CM900DU-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 900A NF MEGA |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，900A |
| 电流 - 集电极 (Ic)（最大）： | 900A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 140nF @ 10V |
| 功率 - 最大： | 2550W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1027 |
CM900DU-24NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Mega Power Dual?
IGBTMOD
900 Amperes/1200 Volts
P
(8 PLACES)
U
H
A
D
G
H
TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)
L
K
C2E1
C
C
J
F
S
G
E
E
G
C B
E
T
E2
C1
U
J
F
Description:
Powerex IGBTMOD? Modules
are designed for use in switching
applications. Each module con-
V
H
G
H
H
H
H
G
H
R (9 PLACES)
M
L
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
LABEL
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
C2
G2
E2
thermal management.
Features:
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
E2
Dimensions
C1
Inches
E1
G1
Millimeters
￡ Low Drive Power
￡ Low V CE(sat)
￡ Discrete Super-Fast Recovery
Free-Wheel Diode
￡ Isolated Baseplate for Easy
Heat Sinking
A
B
C
D
E
F
G
H
J
K
5.91
5.10
1.67±0.01
5.41±0.01
6.54
2.91±0.01
1.65
0.55
1.50±0.01
0.16
150.0
129.5
42.5±0.25
137.5±0.25
166.0
74.0±0.25
42.0
14.0
38.0±0.25
4.0
L
M
P
R
U
V
W
X
Y
Z
1.36 +0.04/-0.02 34.6 +1.0/-0.5
0.075±0.08 1.9±0.2
0.26 6.5
M6 Metric M6
0.62 15.7
0.71 18.0
0.75 19.0
0.43 11.0
0.83 21.0
0.41 10.5
Applications:
￡ High Power UPS
￡ Large Motor Drives
￡ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM900DU-24NF is
a 1200V (V CES ), 900 Ampere Dual
IGBTMOD Power Module.
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
AA
0.22
5.5
Type
CM
Current Rating
Amperes
900
V CES
Volts (x 50)
24
02/10 Rev. 1
1
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| CN2406020N | DIODE MOD FST-REC DUAL 600V 20A |
| CN240610 | DIODE MOD FST-REC DUAL 600V 100A |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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