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| 型号： | CM900DU-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 900A NF MEGA |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，900A |
| 电流 - 集电极 (Ic)（最大）： | 900A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 140nF @ 10V |
| 功率 - 最大： | 2550W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1027 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DU-24NF
Mega Power Dual? IGBTMOD
900 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, VGE
10 3
V CC = 600V
V GE = 15V
R G = 0.35 ?
T j = 125°C
Inductive Load
t d(on)
t d(off)
t f
10 3
I rr
10 3
20
16
I C = 900A
V CC = 400V
10 2
t r
10 2
t rr
10 2
12
V CC = 600V
8
10 1
10 1
10 1
10 2
10 3
10 1
10 1
10 2
V CC = 600V
V GE = 15V
R G = 1.0 ?
T j = 125°C
Inductive Load
10 3
4
0
0
1000 2000 3000 4000 5000 6000 7000
COLLECTOR CURRENT, I C , (AMPERES)
EMITTER CURRENT, I E , (AMPERES)
GATE CHARGE, Q G , (nC)
E SW(on)
10 2
10 1
10 0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10 -3 10 -2 10 -1 10 0
Per Unit Base
R th(j-c) = 0.049°C/W (IGBT)
R th(j-c) = 0.078°C/W (FWDi)
Single Pulse
T C = 25°C
10 1
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10 3
V CC = 600V
V GE = 15V
T j = 125°C
R G = 0.35 ?
E SW(off)
Inductive Load
10 2
REVERSE RECOVERY ENERGY VS.
EMITTER CURRENT
(TYPICAL)
V CC = 600V
V GE = 15V
T j = 125°C
R G = 0.35 ?
Inductive Load
10 -1
10 -2
10 -1
10 -2
10 1
10 1
10 -3
10 -5
10 -4
10 -3
10 -3
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
10 3
10 2
TIME, (s)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10 3
10 2
COLLECTOR CURRENT, I C , (AMPERES)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, I E , (AMPERES)
10 1
10 0
0
0.5
1.0
1.5
V CC = 600V
V GE = 15V
T j = 125°C
I C = 900A
E SW(on)
E SW(off)
Inductive Load
2.0 2.5
10 1
10 0
0
0.5
1.0
1.5
V CC = 600V
V GE = 15V
T j = 125°C
I C = 900A
Inductive Load
2.0 2.5
4
EXTERNAL GATE RESISTANCE, R G , ( ? )
EXTERNAL GATE RESISTANCE, R G , ( ? )
02/10 Rev. 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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