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| 型号： | CM900DU-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 900A NF MEGA |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，900A |
| 电流 - 集电极 (Ic)（最大）： | 900A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 140nF @ 10V |
| 功率 - 最大： | 2550W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1027 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DU-24NF
Mega Power Dual? IGBTMOD
900 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R th(j-c) Q
Test Conditions
Per IGBT 1/2 Module, T C Reference
Min.
—
Typ.
—
Max.
0.049
Units
°C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R th(j-c) D
Per FWDi 1/2 Module, T C Reference
—
—
0.078
°C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R th(j-c') Q
Per IGBT 1/2 Module,
–
–
0.021
°C/W
T C Reference Point Under Chip
Thermal Resistance, Junction to Case
R th(j-c') D
Per FWDi 1/2 Module, T C Reference
–
–
0.034
°C/W
T C Reference Point Under Chip
Contact Thermal Resistance
External Gate Resistance
R th(c-f)
R G
Per 1/2 Module, Thermal Grease Applied
–
0.35
0.016
—
–
2.2
°C/W
?
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
1800
1600
1400
V GE =
20V
15
13
T j = 25 o C
12
1800
1600
1400
V CE = 10V
T j = 25°C
T j = 125°C
5
4
V GE = 15V
T j = 25°C
T j = 125°C
1200
1000
800
600
400
11
10
1200
1000
800
600
400
3
2
1
200
8
9
200
0
0
1
2
3
4
5
6
7
8
9 10
0
0
4
8
12
16
20
0
0
300
600
900 1200 1500 1800
CAPACITANCE VS. VCE
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-CURRENT, I C , (AMPERES)
(TYPICAL)
10
8
T j = 25°C
10 4
10 3
10 2
V GE = 0V
C ies
6
4
2
I C = 900A
I C = 360A
I C = 1800A
10 3
T j = 25°C
T j = 125°C
10 1
10 0
C oes
C res
0
0
4
8
12
16
20
10 2
0.5 1.0
1.5
2.0
2.5 3.0
3.5
4.0
10 -1
10 -1
10 0
10 1
10 2
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
02/10 Rev. 1
EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS)
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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