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| 型号： | CM900DU-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD DUAL 1200V 900A NF MEGA |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 半桥 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.5V @ 15V，900A |
| 电流 - 集电极 (Ic)（最大）： | 900A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 140nF @ 10V |
| 功率 - 最大： | 2550W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
| 其它名称： | 835-1027 |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM900DU-24NF
Mega Power Dual? IGBTMOD
900 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T C' = 96°C)**
Peak Collector Current (T j ≤ 150°C)
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T j < 150°C) (T C' = 25°C)
Mounting Torque, M6 Mounting Screws
Mounting Torque, M6 Main Terminal Screw
Weight (Typical)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P C
–
–
–
V iso
CM900DU-24NF
-40 to 150
-40 to 125
1200
±20
900
1800*
900
1800*
2550
40
40
1400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Total Gate Charge
Emitter-Collector Voltage***
Symbol
I CES
I GES
V GE(th)
V CE(sat)
(Chip)
R (lead)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 90mA, V CE = 10V
I C = 900A, V GE = 15V, T j = 25°C
I C = 900A, V GE = 15V, T j = 125°C
I C = 900A, Terminal-chip
V CC = 600V, I C = 900A, V GE = 15V
I E = 900A, V GE = 0V
Min.
–
–
6
–
–
–
–
–
Typ.
–
–
7
1.8
2.0
0.143
4800
–
Max.
1
1.0
8
2.5
–
–
–
3.2
Units
mA
μ A
Volts
Volts
Volts
m ?
nC
Volts
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
140
16
3
Units
nF
nF
nF
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 600V,
I C = 900A, I E = 900A,
V GE1 = V GE2 = 15V,
R G = 0.35Ω,
–
–
–
–
–
–
–
–
600
200
800
300
ns
ns
ns
ns
Diode Reverse Recovery Time***
Diode Reverse Recovery Charge***
t rr
Q rr
Inductive Load
Switching Operation
–
–
–
50
500
–
ns
μ C
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** TC’ measurement points is just under the chips. If this value is used, R th(f-a) should be measured just under the chips.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
02/10 Rev. 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM900DU-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM900DUC-24NF | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD MPD DUAL 900A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 900A; Transistor Polarity:Dual N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.9kW; Operating Temperature Min:-40C; Operating Temperature Max:130C 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900DUC-24S | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
| CM900HB-90H_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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