参数资料
型号: CM800DU-12H
厂商: Powerex Inc
文件页数: 2/4页
文件大小: 0K
描述: IGBT MOD DUAL 600V 800A U SER
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 3.15V @ 15V,800A
电流 - 集电极 (Ic)(最大): 800A
电流 - 集电极截止(最大): 2mA
Vce 时的输入电容 (Cies): 70.4nF @ 10V
功率 - 最大: 1500W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
CM800DU-12H
DUAL IGBTMOD? U-SERIES MODULE
800 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25 °C unless otherwise speci?ed
Ratings
JUNCTION TEMPERATURE
STORAGE TEMPERATURE
COLLECTOR-EMITTER VOLTAGE (G-E SHORT)
GATE-EMITTER VOLTAGE (C-E SHORT)
COLLECTOR CURRENT (T C = 25°C)
PEAK COLLECTOR CURRENT
EMITTER CURRENT** (T C = 25°C)
PEAK EMITTER CURRENT**
MAXIMUM COLLECTOR DISSIPATION (T C = 25°C, T J ≤ 150°C)
MOUNTING TORQUE, M8 MAIN TERMINAL
MOUNTING TORQUE, M6 MOUNTING
G(E) TERMINAL, M4
WEIGHT
ISOLATION VOLTAGE (MAIN TERMINAL TO BASEPLATE, AC 1 MIN.)
Symbol
T J
T STG
V CES
V GES
I C
I CM
I E
I EM
P C
V ISO
CM800DU-12H
-40 TO 150
-40 TO 125
600
±20
800
1600*
800
1600*
1500
95
40
15
310
2500
Units
°C
°C
VOLTS
VOLTS
AMPERES
AMPERES
AMPERES
AMPERES
WATTS
IN-LB
IN-LB
IN-LB
GRAMS
VOLTS
* PULSE WIDTH AND REPETITION RATE SHOULD BE SUCH THAT THE DEVICE JUNCTION TEMPERATURE (T J ) DOES NOT EXCEED T J(MAX) RATING.
**REPRESENTS CHARACTERISTICS OF THE ANTI-PARALLEL, EMITTER-TO-COLLECTOR FREE-WHEEL DIODE (FWDI).
STATIC ELECTRICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
COLLECTOR-CUTOFF CURRENT
GATE LEAKAGE CURRENT
GATE-EMITTER THRESHOLD VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
TOTAL GATE CHARGE
EMITTER-COLLECTOR VOLTAGE**
Symbol
I CES
I GES
V GE(TH)
V CE(SAT)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 80MA, V CE = 10V
I C = 800A, V GE = 15V, T J = 25°C
I C = 800A, V GE = 15V, T J = 125°C
V CC = 300V, I C = 800A, V GE = 15V
I E = 800A, V GE = 0V
Min.
4.5
Typ.
6
2.5
2.75
1600
Max.
2
0.5
7.5
3.15
2.6
Units
MA
μA
VOLTS
VOLTS
VOLTS
NC
VOLTS
**REPRESENTS CHARACTERISTICS OF THE ANTI-PARALLEL, EMITTER-TO-COLLECTOR FREE-WHEEL DIODE (FWDI).
DYNAMIC ELECTRICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
Symbol
C IES
C OES
C RES
Test Conditions
V CE = 10V, V GE = 0V
Min.
Typ.
Max.
70.4
38.4
10.4
Units
NF
NF
NF
RESISTIVE
LOAD
SWITCH
TIMES
TURN-ON DELAY TIME
RISE TIME
TURN-OFF DELAY TIME
FALL TIME
T D(ON)
T R
T D(OFF)
T F
V CC = 300V, I C = 800A,
V GE1 = V GE2 = 15V,
R G = 3.1 Ω , RESISTIVE
LOAD SWITCHING OPERATION
400
2000
500
300
NS
NS
NS
NS
DIODE REVERSE RECOVERY TIME**
DIODE REVERSE RECOVERY CHARGE**
T RR
Q RR
I E = 800A, DI E /DT = -1600A/ μ S
I E = 800A, DI E /DT = -1600A/ μ S
1.92
160
NS
μC
**REPRESENTS CHARACTERISTICS OF THE ANTI-PARALLEL, EMITTER-TO-COLLECTOR FREE-WHEEL DIODE (FWDI).
THERMAL AND MECHANICAL CHARACTERISTICS, T j = 25 °C unless otherwise speci?ed
Characteristics
THERMAL RESISTANCE, JUNCTION TO CASE
THERMAL RESISTANCE, JUNCTION TO CASE
CONTACT THERMAL RESISTANCE
Symbol
R TH(J-C) Q
R TH(J-C) R
R TH(C-F)
Test Conditions
PER IGBT 1/2 MODULE
PER FWDI 1/2 MODULE
PER MODULE, THERMAL GREASE APPLIED
Min.
Typ.
0.010
Max.
0.083
0.13
Units
°C/W
°C/W
°C/W
2
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