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参数资料
型号： CM800HA-28H
厂商： Powerex Inc
文件页数： 2/4页
文件大小： 0K
描述： IGBT MOD SGL 1400V 800A H SER
标准包装： 1
系列： IGBTMOD™
配置： 单一
电压 - 集电极发射极击穿（最大）： 1400V
Vge, Ic时的最大Vce（开）： 3.6V @ 15V，800A
电流 - 集电极 (Ic)（最大）： 800A
电流 - 集电极截止（最大）： 5mA
Vce 时的输入电容 (Cies)： 172nF @ 10V
功率 - 最大： 4800W
输入： 标准
NTC 热敏电阻： 无
安装类型： 底座安装
封装/外壳： 模块
供应商设备封装： 模块
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-28H
Single IGBTMOD? H-Series Module
800 Amperes/1400 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 G-E Terminal Screws
Module Weight (Typical)
V Isolation
Symbol
T j
T stg
V CES
V GES
I C
I CM
I F
I FM
P d
–
–
–
–
V RMS
CM800HA-28H
–40 to +150
–40 to +125
1400
± 20
800
1600*
800
1600*
4800
95
26
13
1600
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V FM
Test Conditions
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 80mA, V CE = 10V
I C = 800A, V GE = 15V
I C = 800A, V GE = 15V, T j = 150 ° C
V CC = 600V, I C = 800A, V GS = 15V
I E = 800A, V GS = 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.7
2.4
4590
–
Max.
5.0
0.5
7.5
3.6
–
–
3.5
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V GE = 0V, V CE = 10V, f = 1MHz
Min.
–
–
–
Typ.
–
–
–
Max.
172
60
35
Units
nF
nF
nF
Resistive
Turn-on Delay Time
t d(on)
–
–
500
ns
Load
Switching
Times
Rise Time
Turn-off Delay Time
Fall Time
t r
t d(off)
t f
V CC = 600V, I C = 800A,
V GE1 = V GE2 = 15V, R G = 3.3 ?
–
–
–
–
–
–
1200
1000
350
ns
ns
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t rr
Q rr
I E = 800A, di E /dt = –1600A/ μ s
I E = 800A, di E /dt = –1600A/ μ s
–
–
–
6.3
250
–
ns
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c)
R th(j-c)
R th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.026
0.058
0.018
Units
° C/W
° C/W
° C/W
2
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