参数资料
型号: CM900HB-90H
厂商: POWEREX INC
元件分类: IGBT 晶体管
英文描述: Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
中文描述: 900 A, 4500 V, N-CHANNEL IGBT
封装: MODULE-9
文件页数: 3/4页
文件大小: 559K
代理商: CM900HB-90H
3
CM900HB-90H
Single IGBTMOD
HVIGBT
900 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
162
nF
Output Capacitance
V
GE
= 0V, V
CE
= 10V
12.0
nF
Reverse Transfer Capacitance
3.6
nF
Resistive
Turn-on Delay Time
V
CC
= 2250V, I
C
= 900A,
V
GE1
= V
GE2
= 15V,
R
G
= 10
Resistive Load Switching Operation
2.4
μ
s
μ
s
μ
s
μ
s
μ
s
μ
C
Load
Rise Time
2.4
Switching
Turn-off Delay Time
6.0
Times
Fall Time
1.2
Diode Reverse Recovery Time**
I
E
= 900A, di
E
/dt = -1800A/
μ
s
I
E
= 900A, di
E
/dt = -1800A/
μ
s
1.8
Diode Reverse Recovery Charge**
360*
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Per IGBT
0.010
K/W
Thermal Resistance, Junction to Case
Per FWDi
0.020
K/W
Contact Thermal Resistance, Case to Fin
Per Module, Thermal Grease Applied
0.007
K/W
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