参数资料
型号: CM900HB-90H
厂商: POWEREX INC
元件分类: IGBT 晶体管
英文描述: Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
中文描述: 900 A, 4500 V, N-CHANNEL IGBT
封装: MODULE-9
文件页数: 4/4页
文件大小: 559K
代理商: CM900HB-90H
4
CM900HB-90H
Single IGBTMOD
HVIGBT
900 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
0
1
2
3
4
7
EMITTER CURRENT, I
E
, (AMPERES)
FREE-WHEEL DIODE
FORWAR(TYPICAL)
E
E
,
COLLECTOR CURRENT, I
C
, (AMPERES)
E
o
,
HAENERGY CHARACTERISTICS
(TYPICAL)
0
400
800
1200
1600
COLLECTOR CURRENT, I
C
, (AMPERES)
C
S
C
,
SATURATICOLL(TYPICAL)
6
5
0
500
1500
4
3
2
1
0
V
GE
= = 25
2000
1000
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
SAFE TURN(TYPICAL)
0
1000
2000
3000
4000
5000
2000
2500
1500
1000
500
0
6
5
0
500
1000
4
3
2
1
0
T
j
= 25
°
C
T
j
= 125
°
C
2000
1500
0
400
800
1600
1200
6
5
V
CC
= 2250V
V
GE
=
±
15V
R
G
= 10
L
S
= 180nH
T
= 125
°
C
Inductive Load Integrated
Over Range Of 10%
V
CC
= 3000V
V
GE
=
±
15V
R
G
= 10
L
S
= 100nH
T
j
= 125
°
C
0
1
3
5
COLLECTOR CURRENT, I
C
, (AMPERES)
E
o
,
HALENERGY CHARACTERISTICS
(TYPICAL)
2
4
V
CC
= 2250V
V
GE
=
±
15V
R
G
= 10
L
S
= 180nH
T
= 125
°
C
Inductive Load Integrated
Over Range of 10%
0
0.2
0.6
1.0
1.2
EMITTER CURRENT, I
E
, (AMPERES)
E
r
,
REVERSEFREE(TYPICAL)
0
400
1200
1600
800
0.4
0.8
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
DISAFE OPERATING AREA
(TYPICAL)
2000
0
1000
2000
3000
1000
1500
500
R
r
,
0
4000
TIME, (s)
N
t
IMPETRANSI(IGBT)
1.2
10
-2
10
-3
10
-1
10
0
1.0
0.8
0.2
0.4
0.6
0
Single Pulse
T
= 25
°
C
Per Unit Base = R
th(j-c)
= 0.010 K/W
Z
t
t
TRANSIENT THERMAL
IMPEDANCE (FWDi)
TIME, (s)
N
t
1.2
10
-2
10
-3
10
-1
10
0
1.0
0.8
0.2
0.4
0.6
0
Single Pulse
T
= 25
°
C
Per Unit Base = R
th(j-c)
= 0.020 K/W
Z
t
t
V
CC
= 2250V
V
GE
=
±
15V
R
G
= 10
L
S
= 180nH
T
= 125
°
C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
T
°
C
T
j
= 125
°
C
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