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参数资料
| 型号： | CMBT8050 |
| 厂商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 175K |
| 代理商： | CMBT8050 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CMBT8050
SOT-23
Formed SMD Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNITS
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current Continuous
IC
mA
Collector Dissipation @ Ta=25C
PC
mW
Operating And Storage Junction
Temperature Range
Tj, Tstg
C
ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Base Voltage
VCBO
IC=100A, IE=0
30
V
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
25
V
Emitter Base Voltage
VEBO
IE=10A, IC=0
6
V
Collector Cut Off Current
ICBO
VCB=15V, IE=0
50
nA
Emitter Cut Off Current
IEBO
VEB=4V, IC=0
500
nA
DC Current Gain
hFE
*IC=50mA, VCE=1V
100
400
IC=350mA, VCE=1V
60
Collector Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
0.5
V
Base Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
1.2
V
Transition Frequency
fT
IC=100mA, VCE=10V, f=100MHz
150
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
20
pF
CLASSIFICATIONS
CMBT8050
C
D
E
*hFE
100 - 400
100 - 200
150 - 300
280 - 400
MARKING
05
05C
05D
05E
800
250
- 55 to +125
VALUE
30
25
6
PIN CONFIGURATION (NPN)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
相关PDF资料 |
PDF描述 |
|---|---|
| CMBT8050C | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050D | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050E | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8550C | PNP SILICON PLANAR EPITAXIAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CMBT8050C | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050D | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8050E | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBT8098 | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| CMBT8099 | 功能描述:两极晶体管 - BJT Si Planar Trans 80V, 10uA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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