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参数资料
| 型号： | CMLT2207 |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PICOMINI-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 110K |
| 代理商： | CMLT2207 |
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207 and
CMLT2207G each consist of one isolated 2N2222A
NPN transistor and one complementary isolated
2N2907A PNP transistor, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package. This PICOmini
device has been designed for small signal general
purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
Collector-Base Voltage
VCBO
75
60
V
Collector-Emitter Voltage
VCEO
40
60
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
CMLT2207
CMLT2207G
SURFACE MOUNT
PICOmini
TM
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=60V
-
10
-
nA
ICBO
VCB=50V
-
10
nA
ICBO
VCB=60V, TA=125°C
-
10
-
nA
ICBO
VCB=50V, TA=125°C
-
10
nA
IEBO
VEB=3.0V
-
10
-
nA
ICEV
VCE=60V, VEB(OFF)=3.0V
-
10
-
nA
ICEV
VCE=30V, VEB(OFF)=500mV
-
50
nA
BVCBO
IC=10μA75
-
60
-
V
BVCEO
IC=10mA
40
-
60
-
V
BVEBO
IE=10μA
6.0
-
5.0
-
V
VCE(SAT)
IC=150mA, IB=15mA
-
0.3
-
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
-
1.0
-
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
-
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
-
2.0
-
2.6
V
hFE
VCE=10V, IC=0.1mA
35
-
75
-
hFE
VCE=10V, IC=1.0mA
50
-
100
-
hFE
VCE=10V, IC=10mA
75
-
100
-
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
-
hFE
VCE=10V, IC=500mA
40
-
50
-
R2 (6-June 2008)
MARKING CODES:
CMLT2207: L70
CMLT2207G: L7G
The CMLT2207G is Halogen Free by design.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMLT2207G | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS |
| CMLT2207G TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMLT Series 40 / 60 V 600 mA NPN/PNP PICOmini Dual Silicon Transistor - SOT-563 |
| CMLT2207G TR PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| CMLT2207TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN/PNP 40V/60V 0.6A 6-Pin SOT-563 T/R |
| CMLT2222A | 功能描述:两极晶体管 - BJT Dual NPN Small Signl Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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