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参数资料
| 型号： | CMPT3906GTR |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 120K |
| 代理商： | CMPT3906GTR |
CMPT3904
CMPT3906
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
CMPT3904G* CMPT3906G*
UNITS
Collector-Base Voltage
VCBO
60
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
CMPT3904
CMPT3906
ELECTRICAL CHARACTERISTICS: (TA=25°C)
CMPT3904G*
CMPT3906G*
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
-
50
-
50
nA
IBL
VCE=30V, VEB=3.0V
-
50
-
50
nA
BVCBO
IC=10μA
60
-
40
-
V
BVCEO
IC=1.0mA
40
-
40
-
V
BVEBO
IE=10μA
6.0
-
5.0
-
V
VCE(SAT)
IC=10mA, IB=1.0mA
-
0.20
-
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
-
0.30
-
0.40
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.85
0.65
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
-
0.95
-
0.95
V
hFE
VCE=1.0V, IC=0.1mA
40
-
60
-
hFE
VCE=1.0V, IC=1.0mA
70
-
80
-
hFE
VCE=1.0V, IC=10mA
100
300
100
300
hFE
VCE=1.0V, IC=50mA
60
-
60
-
hFE
VCE=1.0V, IC=100mA
30
-
30
-
CMPT3904 CMPT3904G*
NPN
CMPT3906 CMPT3906G*
PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R6 (23-January 2009)
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose amplifier and switching applications.
MARKING CODES: CMPT3904:
C1A
CMPT3906:
C2A
CMPT3904G*: CG1
CMPT3906G*: CG2
* Device is Halogen Free by design
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMPT3906-LEAD FREE | 制造商:Central Semiconductor Corp 功能描述:General Purpose PNP SMD (Surface Mount) Transistor SOT-23 350mW RoHS 制造商:Central Semiconductor Corp 功能描述:General Purpose PNP SMD (Surface Mount) Transistor SOT-23 350mW RoHS - free partial T/R at 500. |
| CMPT3906TR | 功能描述:两极晶体管 - BJT PNP Gen Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMPT-4.70-0.77 | 制造商:TALEMA 制造商全称:TALEMA 功能描述:Common Mode Toroidal Chokes |
| CMPT4033 | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMPT4033 TR | 制造商:Central Semiconductor Corp 功能描述:Transistors Bipolar - BJT |
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