参数资料
型号: CMPTA92E
厂商: CENTRAL SEMICONDUCTOR CORP
元件分类: 小信号晶体管
中文描述: 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SOT-23, 3 PIN
文件页数: 1/2页
文件大小: 327K
代理商: CMPTA92E
CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42E and
CMPTA92E are Enhanced versions of the CMPTA42
and CMPTA92 complementary surface mount high
voltage transistors.
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN
CMPTA42E
CMPTA92E
MAX
UNITS
ICBO
VCB=200V
250
nA
IEBO
VEB=3.0V
100
nA
BVCBO
IC=100A
350
590
500
V
BVCEO
IC=1.0mA
350
475
450
V
BVEBO
IE=100A
6.0
8.7
9.6
V
VCE(SAT) IC=50mA, IB=5.0mA
125
150
350
mV
VBE(SAT)
IC=20mA, IB=2.0mA
0.9
V
hFE
VCE=10V, IC=1.0mA
50
110
105
hFE
VCE=10V, IC=10mA
50
110
105
hFE
VCE=10V, IC=30mA
50
110
105
fT
VCE=20V, IC=10mA, f=100MHz
50
75
MHz
Cob
VCB=20V, IE=0, f=1.0MHz
6.0
pF
FEATURED ENHANCED SPECIFICATIONS:
BVCBO from 300V min to 350V min.
BVCEO from 300V min to 350V min.
hFE from 25 min to 50 min.
Enhanced specification
SOT-23 CASE
R3 (3-February 2010)
www.centra lsemi.com
相关PDF资料
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CMPTA56TR
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CMRA2455-10
CMRD2455-10
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