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参数资料
| 型号： | CNY17G-3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Dual CTR 100-200% |
| 文件页数： | 2/8页 |
| 文件大小： | 106K |
| 代理商： | CNY17G-3 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83886
2
Rev. 1.6, 13-Oct-09
CNY17G
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 s
IFSM
3A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 110
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (2)
2 mm from case, t
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
Reverse current
VR = 5 V
IR
10
A
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 A
VECO
7V
Collector emitter cut-off current
VCE = 10 V, IF = 0
ICEO
10
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CNY17G-4 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR 160-320% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY17GF1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER |
| CNY17G-F1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| CNY17G-F1-004 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| CNY17G-F1-009 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
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