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参数资料
| 型号： | CNY17G-3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Dual CTR 100-200% |
| 文件页数： | 3/8页 |
| 文件大小： | 106K |
| 代理商： | CNY17G-3 |
Document Number: 83886
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.6, 13-Oct-09
3
CNY17G
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 5 V, IF = 10 mA
CNY17G-1
CTR
40
80
%
CNY17G-2
CTR
63
125
%
CNY17G-3
CTR
100
200
%
CNY17G-4
CTR
160
320
%
VCE = 5 V, IF = 1 mA
CNY17G-1
CTR
13
%
CNY17G-2
CTR
22
%
CNY17G-3
CTR
34
%
CNY17G-2
CTR
56
200
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
IF
130
mA
OUTPUT
Power dissipation
Pdiss
265
mW
COUPLER
Rated impulse voltage
VIOTM
6kV
Safety temperature
Tsi
150
°C
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
AC isolation test voltage (RMS)
f = 50 Hz, t = 1 s
VISO
3750
VRMS
Tracking resistance
(comparative tracking index)
CTI
275
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
6kV
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
0
25
50
75
125
0
50
100
150
200
300
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
Tsi - Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
Psi (mW)
IR-diode
Isi (mA)
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CNY17G-4 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR 160-320% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY17GF1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER |
| CNY17G-F1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| CNY17G-F1-004 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| CNY17G-F1-009 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
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