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参数资料
| 型号： | CNY65 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out |
| 文件页数： | 2/9页 |
| 文件大小： | 118K |
| 代理商： | CNY65 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
2
Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
75
mA
Forward surge current
tp 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
120
mW
Junction temperature
Tj
100
°C
OUTPUT
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation
Pdiss
130
mW
Junction temperature
Tj
100
°C
COUPLER
AC isolation test voltage CNY64
t = 1 min
VISO
8200
VRMS
DC isolation test voltage CNY65
t = 1 s
VISO
13.9
kV
DC isolation test voltage CNY66
t = 1 s
VISO
13.9
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 85
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Soldering temperature
2 mm from case,
10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
7V
Collector emitter leakage current
VCE = 20 V, IF = 0 A
ICEO
200
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
相关PDF资料 |
PDF描述 |
|---|---|
| CNY65A | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY65B | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY65EXI | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY64A | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
| CNY64B | Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CNY65(B)-V | 功能描述:Optoisolator Transistor Output 8200Vrms 1 Channel 4-DIP 制造商:everlight electronics co ltd 系列:- 包装:管件 零件状态:有效 通道数:1 电压 - 隔离:8200Vrms 电流传输比（最小值）:100% @ 5mA 电流传输比（最大值）:200% @ 5mA 打开 / 关闭时间（典型值）:6μs，7μs 上升/下降时间（典型值）:3μs，5μs 输入类型:DC 输出类型:晶体管 电压 - 输出（最大值）:80V 电流 - 输出/通道:50mA 电压 - 正向（Vf）（典型值）:1.6V 电流 - DC 正向（If）:75mA Vce 饱和值（最大值）:300mV 工作温度:-55°C ~ 85°C 安装类型:通孔 封装/外壳:4-DIP（0.600"，15.24mm） 供应商器件封装:4-DIP 标准包装:45 |
| CNY65 | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| CNY65A | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| CNY65A | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| CNY65ABST | 功能描述:晶体管输出光电耦合器 PHOTOTRANSISTOR OUT CTR 80-240% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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