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参数资料
| 型号： | COP8SGE744Q8 |
| 厂商： | National Semiconductor Corporation |
| 英文描述： | LP2950/LP2951 Series of Adjustable Micropower Voltage Regulators; Package: MINI SOIC; No of Pins: 8 |
| 中文描述： | 8位的CMOS基于ROM和OTP微控制器具有8K到32K的内存，2个比较器和USART |
| 文件页数： | 9/62页 |
| 文件大小： | 913K |
| 代理商： | COP8SGE744Q8 |
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AC Electrical Characteristics
(Continued)
Note 4:
Maximum rate of voltage change must be
<
0.5 V/ms.
Note 5:
Supply and IDLE currents are measured with CKI driven with a square wave Oscillator, External Oscillator, inputs connected to V
CC
and outputs driven low
but not connected to a load.
Note 6:
The HALT mode will stop CKI from oscillating in the R/C and the Crystal configurations. In the R/C configuration, CKI is forced high internally. In the crystal
or external configuration, CKI is TRI-STATE. Measurement of I
HALT is done with device neither sourcing nor sinking current; with L. F, C, G0, and G2–G5
programmed as low outputs and not driving a load; all outputs programmed low and not driving a load; all inputs tied to V
CC
; clock monitor disabled. Parameter refers
to HALT mode entered via setting bit 7 of the G Port data register.
Note 7:
Pins G6 and RESET are designed with a high voltage input network. These pins allow input voltages
>
V
and the pins will have sink current to V
when
biased at voltages
>
V
(the pins do not have source current when biased at a voltage below V
). The effective resistance to V
is 750
(typical). These two
pins will not latch up. The voltage at the pins must be limited to
<
14V. WARNING: Voltages in excess of 14V will cause damage to the pins. This warning excludes
ESD transients.
Note 8:
National Semiconductor uses the High Temperature Storage Life (HTSL) test to evaluate the data retention capabilities of the EPROM memory cells used
in our OTP microcontrollers. Qualification devices have been stressed at 150C for 1000 hours. Under these conditions, our EPROM cells exhibit data retention
capabilities in excess of 29 years. This is based on an activation energy of 0.7eV derated to 55C.
Note 9:
Parameter characterized but not tested.
Note 10:
Rise times faster than the minimum specification may trigger an internal power-on-reset.
Note 11:
MICROWIRE Setup and Hold Times and Propagation Delays are referenced to the appropriate edge of the MICROWIRE clock. See and the MICROWIRE
operation description.
Comparators AC and DC Characteristics
V
CC
= 5V, 40C
≤
T
A
≤
+85C.
Parameter
Input Offset Voltage (Note 12)
Input Common Mode Voltage Range
Voltage Gain
Low Level Output Current
High Level Output Current
DC Supply Current per Comparator
(When Enabled)
Response Time (Note 13)
Conditions
Min
Typ
±
5
Max
±
15
Units
mV
V
dB
mA
mA
μA
0.4V
≤
V
IN
≤
V
CC
1.5V
0.4
V
CC
1.5
100
V
OL
= 0.4V
V
OH
= V
CC
0.4V
1.6
1.6
150
200 mV step input
100 mV Overdrive,
100 pF Load
600
ns
Comparator Enable Time(Note 14)
600
ns
Note 12:
The comparator inputs are high impedance port inputs and, as such, input current is limited to port input leakage current.
Note 13:
Response time is measured from a step input to a valid logic level at the comparator output. software response time is dependent of instruction execution.
Note 14:
Comparator enable time is that delay time required between the end of the instruction cycle that enables the comparator and using the output of the
comparator, either by hardware or by software.
10131709
FIGURE 3. MICROWIRE/PLUS Timing
C
www.national.com
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| COP8SGE744V8 | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| COP8SGE744V8/NOPB | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| COP8SGE7HLQ8 | 功能描述:IC MCU OTP 8BIT 8K 2-COMP 44LLP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:COP8™ 8SG 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| COP8SGE7VEJ7 | 制造商:Texas Instruments 功能描述: |
| COP8SGE7VEJ8 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述: |
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