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参数资料
| 型号： | CQY36N |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin T-3/4 Bulk |
| 中文描述： | Infrared Emitters 55 Degree 1.5mW |
| 文件页数： | 2/5页 |
| 文件大小： | 90K |
| 代理商： | CQY36N |
www.vishay.com
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81001
2
Rev. 1.8, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Vishay Semiconductors
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
1020
3040506070
8090100
21319
T
amb - Ambient Temperature (°C)
P
V
-
Power
Dissipation
(mW)
R
thJA = 450 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21320
I F
-
Forward
Current
(mA)
R
thJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 50 mA, tp 20 ms
VF
1.3
1.6
V
Temperature coefficient of VF
IF = 100 mA
TKVF
- 1.3
mV/K
Breakdown voltage
IR = 100 μA
V(BR)
5μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
50
pF
Radiant intensity
IF = 50 mA, tp 20 ms
Ie
0.7
1.5
2.1
mW/sr
Radiant power
IF = 50 mA, tp 20 ms
e
10
mW
Temperature coefficient of
e
IF = 50 mA
TK
e
- 0.8
%/K
Angle of half intensity
± 55
deg
Peak wavelength
IF = 50 mA
p
950
nm
Spectral bandwidth
IF = 50 mA
50
nm
Rise time
IF = 100 mA
tr
800
ns
IF = 1.5 A, tp/T = 0.01, tp 10 μs
tr
400
ns
Virtual source diameter
d
1.2
mm
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I
-Forward
Current
(mA)
F
4
3
2
1
0
VF - Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V
F
rel
-
Relative
Forward
Voltage
(V)
94 7990
T
amb - Ambient Temperature (°C)
100
80
60
40
20
0
I
F = 10 mA
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| CQY37N | LED IrLED 950nm 2-Pin T-3/4 Bulk |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CQY36N_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| CQY36N_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| CQY37N | 功能描述:红外发射源 GaAs IR EMIT DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| CQY37N | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 1.8MM 950NM |
| CQY37N_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:GaAs Infrared Emitting Diode in Miniature (T-4/3) Package |
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