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参数资料
| 型号： | CQY36N |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin T-3/4 Bulk |
| 中文描述： | Infrared Emitters 55 Degree 1.5mW |
| 文件页数： | 3/5页 |
| 文件大小： | 90K |
| 代理商： | CQY36N |
Document Number: 81001
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.8, 16-May-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CQY36N
Infrared Emitting Diode, RoHS
Compliant, 950 nm, GaAs
Vishay Semiconductors
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7917
103
101
102
104
100
0.1
1
10
100
IF – Forward Current (mA)
I
–
Radiant
Intensity
(mW/sr)
e
0.1
1
10
100
110
100
1000
13718
IF - Forward Current (mA)
-Radiant
Power
(mW)
e
Φ
- 10
10
50
0
100
0
0.4
0.8
1.2
1.6
I e
rel
;
140
94 7993
IF = 20 mA
Φ
e
rel
Tamb - Ambient Temperature (°C)
900
950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φ
e
rel
-
Relative
Radiant
Power
I
F = 100 mA
0.4
0.2
0
0.2
0.4
I
–
Relative
Radiant
Intensity
e
rel
0.6
94 7919
0.6
0.9
0.8
0°
30°
10
°
20
°
40°
50°
60°
70°
80°
0.7
1.0
相关PDF资料 |
PDF描述 |
|---|---|
| CQY37N | LED IrLED 950nm 2-Pin T-3/4 Bulk |
| CSTCR4M00G55A-R0 | |
| D02VEPB905FS1C2FSUTAH | 9 CONTACT(S), POLYETHERIMIDE, FEMALE, CIRCULAR CONNECTOR, SOLDER, RECEPTACLE |
| D02VEPB905FS1C3FSUTAH | 9 CONTACT(S), POLYETHERIMIDE, FEMALE, CIRCULAR CONNECTOR, SOLDER, RECEPTACLE |
| D02VEPB905FS1P1FSUTAH | 9 CONTACT(S), POLYETHERIMIDE, FEMALE, CIRCULAR CONNECTOR, SOLDER, RECEPTACLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CQY36N_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| CQY36N_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| CQY37N | 功能描述:红外发射源 GaAs IR EMIT DIODE RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| CQY37N | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 1.8MM 950NM |
| CQY37N_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:GaAs Infrared Emitting Diode in Miniature (T-4/3) Package |
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