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参数资料
| 型号： | CS4124 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | High Side PWM FET Controller(高端PWM FET控制器) |
| 中文描述： | 高侧FET的控制器的PWM（脉宽调制高端场效应管控制器） |
| 文件页数： | 3/12页 |
| 文件大小： | 86K |
| 代理商： | CS4124 |
CS4124
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(4.0 V
≤
V
CC
≤
26 V; –40
°
C < T
J
< 125
°
C; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
V
CC
Supply
Operating Current Supply
7.0 V
≤
V
CC
≤
18 v
4.0 V
≤
V
CC
< 7.0 V, 18 V < V
CC
≤
26 V
–
–
5.0
–
10
15
mA
mA
Quiescent Current
V
CC
= 12 V
–
170
275
μ
A
Overvoltage Shutdown
–
26.5
–
29
V
Control (CTL)
Control Input Current
CTL = 0 V to 5.0 V
–2.0
0.1
2.0
μ
A
Sleep Mode Threshold
–
8.0%
10%
12%
V
REG
Sleep Mode Hysteresis
7.0 V
≤
V
CC
≤
26 V
4.0 V
≤
V
CC
< 7.0 V
50
10
100
–
150
150
mV
mV
Control Sense
Differential Voltage Sense
7.0 V
≤
V
CC
≤
18 V:
I
ADJ
= 1.0 V and R
CS1
= 51
I
ADJ
= 4.0 V and R
CS1
= 51
4.0 V
≤
V
CC
< 7.0 V:
I
ADJ
= 1.0 V and R
CS1
= 51
18 V < V
CC
≤
26 V:
I
ADJ
= 1.0 V and R
CS1
= 51
I
ADJ
= 4.0 V and R
CS1
= 51
18
104
15
15
102
–
–
–
–
–
34
125
39
39
130
mV
mV
mV
mV
mV
I
ADJ
Input Current
4.0 V
≤
V
CC
≤
26 V, I
ADJ
= 0 V to 5.0 V
–2.0
0.3
2.0
μ
A
Linear Regulator
Output Voltage, V
REG
V
CC
= 4.0 V
V
CC
= 13.2 V
V
CC
= 26 V
2.0
4.85
4.85
–
–
–
–
5.15
5.20
V
V
V
Inhibit
Inhibit Threshold
–
40%
50%
60%
V
REG
Inhibit Hysteresis
4.0 V
≤
V
CC
≤
7.0 V
7.0 V
≤
V
CC
≤
26 V
100
150
–
325
500
500
mV
mV
External Drive (OUTPUT)
Output Frequency
4.0 V
≤
V
CC
< 7.0 V:
R
OSC
= 93.1 k
, C
OSC
= 470 pF
7.0 V
≤
V
CC
≤
18 V:
R
OSC
= 93.1 k
, C
OSC
= 470 pF
18 V < V
CC
≤
26 V:
R
OSC
= 93.1 k
, C
OSC
= 470 pF
10
17
17
–
20
20
25
23
25
kHz
kHz
kHz
Voltage to Duty Cycle Conversion
4.0 V
≤
V
CC
< 7.0 V:
V
CC
= 13 V, CTL = 1.0 V
V
CC
= 13 V, CTL = 2.0 V
7.0 V
≤
V
CC
≤
18 V:
V
CC
= 13 V, CTL = 30% V
REG
V
CC
= 13 V, CTL = 55.8% V
REG
18 V < V
CC
≤
26 V:
V
CC
= 13 V, CTL = 1.5 V
V
CC
= 13 V, CTL = 3.5 V
65
100
28.3
56.0
11.8
34.2
–
–
–
–
–
–
75
–
36.3
64.0
21.8
44.2
%
%
%
%
%
%
Output Rise Time
4.0 V
≤
V
CC
≤
26 V:
R
GATE
= 6.0
, C
GATE
= 5.0 nF
–
.25
1.0
μ
s
Output Fall Time
4.0 V
≤
V
CC
≤
26 V:
R
GATE
= 6.0
, C
GATE
= 5.0 nF
–
.30
1.0
μ
s
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