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参数资料
| 型号： | CS48560-CQZR |
| 厂商： | Cirrus Logic Inc |
| 文件页数： | 10/23页 |
| 文件大小： | 0K |
| 描述： | IC DSP HP 32BIT 12CH I/O 48-QFP |
| 标准包装： | 2,000 |
| 系列： | CS485xx |
| 类型： | 定点 |
| 接口： | I²C，SPI |
| 时钟速率： | 150MHz |
| 芯片上RAM： | 96kB |
| 电压 - 输入/输出： | 3.30V |
| 电压 - 核心： | 1.80V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-LQFP |
| 供应商设备封装： | 48-LQFP（7x7） |
| 包装： | 带卷 (TR) |
| 配用： | 598-1284-ND - KIT USB EVALUATION FOR CDB48500 |
5.4 Power Supply Characteristics
Parameter
High-level input voltage
Low-level input voltage, except XTI
Low-level input voltage, XTI
Input hysteresis
High-level output voltage (I O = –2 mA), except XTI
Low-level output voltage (I O = 2 mA), except XTI
Input leakage XTI
Input leakage current (all digital pins with internal pull-up resistors enabled)
Symbol
V IH
V IL
V ILXTI
V hys
V OH
V OL
I LXTI
I LEAK
Min
2.0
—
—
—
VDDIO*0.9
—
—
—
Typ
—
—
—
0.4
—
—
—
—
Max
—
0.8
0.6
—
—
VDDIO*0.1
5
70
Unit
V
V
V
V
V
V
μA
μA
5.4 Power Supply Characteristics
(Measurements performed under operating conditions)
Parameter
Min
Typ
Max
Unit
Operational Power Supply Current:
VDD: Core and I/O operating 1
VDDA: PLL operating
VDDIO: With most ports operating
Total Operational Power Dissipation:
—
—
—
—
203
8
27
480
—
—
—
—
mA
mA
mA
mW
Standby Power Supply Current:
VDD: Core and I/O not clocked
VDDA: PLL halted
VDDIO: All connected I/O pins 3-stated by other ICs in system
Total Standby Power Dissipation
—
—
—
—
100
1
50
348
—
—
—
—
μA
μA
μA
μW
1.Dependent on application firmware and DSP clock speed.
5.5 Thermal Data (48-pin LQFP)
Junction Temperature
Parameter
Symbol
T j
Min
—
Typ
—
Max
125
Unit
°C
Thermal Resistance (Junction to Ambient)
Two-layer board 1
Four-layer board 2
θ ja
—
—
63.5
54
—
—
°C/Watt
Thermal Resistance (Junction to Top of Package)
Two-layer board 3
Four-layer board 4
ψ jt
—
—
0.70
0.64
—
—
°C/Watt
1.Two-layer board is specified as a 76 mm X 114 mm, 1.6 mm thick FR-4 material with 1 oz. copper covering 20% of the top and bottom layers.
2.Four-layer board is specified as a 76 mm X 114 mm, 1.6 mm thick FR-4 material with 1 oz. copper covering 20% of the top and bottom layers and 0.5
oz. copper covering 90 % of the internal power plane and ground plane layers.
3.To calculate the die temperature for a given power dissipation
T j = Ambient Temperature + [(Power Dissipation in Watts)* θ ja ]
4.To calculate the case temperature for a given power dissipation
T c = T j – [(Power Dissipation in Watts)* ψ jt ]
10
DS734F5
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