参数资料
型号: CSFM105-G
厂商: Comchip Technology
文件页数: 1/4页
文件大小: 91K
描述: DIODE FAST 500V 1A SOD123
标准包装: 2,500
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.7V @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 5µA @ 600V
电容@ Vr, F: 10pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-123T
供应商设备封装: 迷你型 SMA/SOD-123
包装: 带卷 (TR)
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Symbol
Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum Instantaneous forward
voltage at IF=1.0A
Forward surge current
Max. Reverse recovery time
Max.Reverse current
Typ. Thermal resistance
Operating junction temperature
Storage temperature range
Reverse V
oltage: 50 to 600 Volts
Forward Current: 1.0
Amp
RoHS Device
Dimensions
in
inches
and
(millimeter)
Features
-T
iny plastic SMD package.
-High current capability
.
-Super fast recovery time for switching mode application.
-High surge current capability
.
-Glass passivated chip junction.
Mechanical data
-Epoxy: UL
94-V0 rated flame retardant.
-T
erminals: Solderable per MIL-STD-750, method
2026.
-Polarity: Indicated by cathode band.
-W
eight: 0.018 grams approx.
CSFM101-G Thru. CSFM105-G
Page 1
QW-BS005
SMD Super Fast Recovery Rectifiers
REV:C
Comchip Technology CO., LTD.
Mini SMA
/ SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.075(1.9)
0.059(1.5)
0.067(1.7)
0.051(1.3)
0.028(0.70) Typ.
0.028(0.7) Typ.
VRRM
VDC
VRMS
IO
VF
IFSM
Trr
IR
TJ
TSTG
RθJA
CSFM
101-G
CSFM
102-G
CSFM
103-G
CSFM
104-G
CSFM
105-G
50
50
35
100
100
70
200
200
140
1.0
25
35
5.0
42
-55 to +150
-65 to +175
400
400
280
600
600
420
V
V
V
A
V
A
nS
μA
°C/W
°C
°C
0.95
1.70
1.25
-Batch process design,excellent power dissipation
of
fers better reverse leakage current and thermal
resistance.
-Low profile surface mounted application in order
to optimize board space.
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
Max. forward rectified current
Ambient temperature=50°C
Conditions
superimposed on rated
load (JEDEC method)
8.3ms single half sine-wave
IF=0.5A
, I
R=1.0A
IRR=0.25A
V
R=VRRM
TJ=@25°C
V
R=VRRM
TJ=@100°C
Junction to ambient
Diode junction capacitance
CJ
10
pF
f=1MHZ and applied 4V DC
reverse voltage
100
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