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参数资料
| 型号： | CSPESD304G-HST |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | IC TVS 4CH ESD ARRAY 5CSP |
| 产品变化通告： | Product Obsolescence 04/Nov/2010 |
| 标准包装： | 3,500 |
| 类型： | 低通 |
| 技术： | RC（Pi） |
| 通道数： | 4 |
| 值： | C = 27pF |
| ESD 保护： | 是 |
| 滤波器阶数： | 2nd |
| 应用： | 移动设备的数据线路 |
| 封装/外壳： | 5-UFBGA，WLCSP |
| 尺寸/尺寸： | 0.052" L x 0.038" W（1.33mm x 0.96mm） |
| 高度： | 0.028"（0.72mm） |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
CSPESD304
Table 1. PIN DESCRIPTIONS
PACKAGE / PINOUT DIAGRAMS
5 ? bump CSP Package
Top View
Bottom View
Pin
Name
Description
(Bumps Down View)
(Pins Up View)
A1
A3
B2
C1
C3
ESD_1
ESD_2
GND
ESD_3
ESD_4
ESD Channel 1
ESD Channel 2
Device Ground
ESD Channel 3
ESD Channel 4
Orientation
Marking
(see Note)
A
B
C
+
1 2 3
Orientation
Marking
C1
A1
A1
B2
C3
A3
CSPESD304
CSP Package
Note: Lead ? free devices are specified by using a “+” character
for the top side orientation mark.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
DC Package Power Rating
Parameter
Rating
? 65 to +150
200
Units
° C
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
? 40 to +85
Units
° C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V DIODE
I LEAK
Diode Reverse Breakdown Voltage
Diode Leakage Current
I DIODE = 10 m A
V IN = 3.3 V, T A = 25 ° C
5.5
100
V
nA
V SIG
Signal Voltage
Positive Clamp
Negative Clamp
I DIODE = 10 mA
5.6
? 0.4
6.8
? 0.8
9.0
? 1.5
V
V ESD
V CL
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883, Method 3015
b) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4
Clamping Voltage during ESD Discharge
MIL ? STD ? 883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Note 2)
(Note 2)
± 30
± 15
+15
? 8
kV
V
C DIODE
Diode Capacitance
At 2.5 VDC Reverse Bias,
1 MHz, 30 mVAC
22
27
32
pF
1. T A = ? 40 to +85 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
http://onsemi.com
2
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