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| 型号： | CY7C0851AV-133AXI |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| 中文描述： | 64K X 36 DUAL-PORT SRAM, 4 ns, PQFP176 |
| 封装： | 24 X 24 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-176 |
| 文件页数： | 21/36页 |
| 文件大小： | 956K |
| 代理商： | CY7C0851AV-133AXI |
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CY7C0850AV,CY7C0851V/CY7C0851AV
CY7C0852V/CY7C0852AV
CY7C0853V/CY7C0853AV
Document #: 38-06070 Rev. *J
Page 28 of 36
Table 7. Read/Write and Enable Operation (Any Port) [64, 65, 62, 63]
Inputs
Outputs
Operation
OE
CLK
CE0
CE1
R/W
DQ0 – DQ35
X
H
X
High-Z
Deselected
X
L
X
High-Z
Deselected
XL
H
L
DIN
Write
LL
H
DOUT
Read
H
X
L
H
X
High-Z
Outputs disabled
Switching Waveforms (continued)
tCH2
tCL2
tCYC2
CLKL
tCH2
tCL2
tCYC2
CLKR
3FFFF
tSA
tHA
An+3
An
An+1
An+2
L_PORT
ADDRESS
Am
Am+4
Am+1
3FFFF
Am+3
R_PORT
ADDRESS
INTR
tSA
tHA
tSINT
tRINT
Notes
57. CE0 = OE = ADS = CNTEN = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH.
58. Address “3FFFF” is the mailbox location for R_Port of a 9M device.
59. L_Port is configured for Write operation, and R_Port is configured for Read operation.
60. At least one byte enable (B0 – B3) is required to be active during interrupt operations.
61. Interrupt flag is set with respect to the rising edge of the Write clock, and is reset with respect to the rising edge of the Read clock.
62. OE is an asynchronous input signal.
63. When CE changes state, deselection and Read happen after one cycle of latency.
64. 9 M device has 18 address bits, 4M device has 17 address bits, 2 M device has 16 address bits, and 1M device has 15 address bits.
65. “X” = “Don’t Care,” “H” = HIGH, “L” = LOW.
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C0851AV-133BBI | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0851AV-167BBXC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0852AV-133AXC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0852AV-133AXI | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0852AV-133BBI | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C0851AV-133BBC | 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4.7NS 172FBGA - Trays 制造商:Rochester Electronics LLC 功能描述: |
| CY7C0851AV-133BBI | 功能描述:静态随机存取存储器 2MB (64Kx36) 3.3v 133MHz Synch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C0851AV-167AC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4NS 176TQFP - Trays |
| CY7C0851AV-167AXC | 功能描述:静态随机存取存储器 3.3V, 64Kx36 Sync Dual Port RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C0851AV-167BBC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4NS 172FBGA - Trays 制造商:Rochester Electronics LLC 功能描述: |
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