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| 型号： | CY7C0852AV-167AXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| 中文描述： | 128K X 36 DUAL-PORT SRAM, 4 ns, PQFP176 |
| 封装： | 24 X 24 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-176 |
| 文件页数： | 13/36页 |
| 文件大小： | 956K |
| 代理商： | CY7C0852AV-167AXC |
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CY7C0850AV,CY7C0851V/CY7C0851AV
CY7C0852V/CY7C0852AV
CY7C0853V/CY7C0853AV
Document #: 38-06070 Rev. *J
Page 20 of 36
Figure 12. Read-to-Write-to-Read (OE Controlled)[37, 38, 39, 40]
Figure 13. Read with Address Counter Advance[39]
Switching Waveforms (continued)
tCYC2
tCL2
tCH2
tHC
tSC
tHW
tSW
tHA
tSA
An
An+1
An+2
An+3
An+4
An+5
tHW
tSW
tSD tHD
Dn+2
tCD2
tOHZ
READ
WRITE
Dn+3
Qn
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
OE
Qn+4
tCD2
Qn+1
tCD2
tSA
tHA
tCH2
tCL2
tCYC2
CLK
ADDRESS
An
COUNTER HOLD
READ WITH COUNTER
tSAD
tHAD
tSCN
tHCN
tSAD
tHAD
tSCN
tHCN
Qx–1
Qx
Qn
Qn+1
Qn+2
Qn+3
tDC
tCD2
READ WITH COUNTER
READ
EXTERNAL
ADDRESS
ADS
CNTEN
DATAOUT
Notes
37. Addresses do not have to be accessed sequentially since ADS = CNTEN = VIL with CNT/MSK = VIH constantly loads the address on the rising edge of the CLK.
Numbers are for reference only
38. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
39. CE0 = OE = B0 – B3 = LOW; CE1 = R/W = CNTRST = MRST = HIGH.
40. CE0 = B0 – B3 = R/W = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be completed
(labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
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相关代理商/技术参数 |
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|---|---|
| CY7C0852AV-167BBC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 128KX36 4NS 172BGA - Trays |
| CY7C0852V-100BBC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 4.5MBIT 128KX36 5NS 172BGA - Bulk |
| CY7C0852V-133AC | 制造商:Rochester Electronics LLC 功能描述:3.3V 128KX36 SYNC DUAL PORT SRAM - Bulk 制造商:Cypress Semiconductor 功能描述:128K X 36 DUAL-PORT SRAM, 4.4 ns, PQFP176 |
| CY7C0852V-133AXC | 功能描述:IC SRAM 4MBIT 133MHZ 176LQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| CY7C0852V-133AXCT | 功能描述:IC SRAM 4MBIT 133MHZ 176LQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
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