- 您现在的位置：买卖IC网 > PDF目录295354 > CY7C1009B-20VXC (CYPRESS SEMICONDUCTOR CORP) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 PDF资料下载
参数资料
| 型号： | CY7C1009B-20VXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封装： | 0.300 INCH, LEAD FREE, SOJ-32 |
| 文件页数： | 4/10页 |
| 文件大小： | 362K |
| 代理商： | CY7C1009B-20VXC |
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *C
Page 3 of 10
AC Test Loads and Waveforms
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
≤ 3 ns
OUTPUT
R1 480
R1 480
R2
255
R2
255
167
Equivalent to:
VENIN EQUIVALENT
1.73V
TH
Switching Characteristics[5]
Parameter
Description
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle
tRC
Read Cycle Time
12
15
20
ns
tAA
Address to Data Valid
12
15
20
ns
tOHA
Data Hold from Address Change
3
ns
tACE
CE1 LOW to Data Valid, CE2 HIGH to Data Valid
12
15
20
ns
tDOE
OE LOW to Data Valid
6
7
8
ns
tLZOE
OE LOW to Low Z
0
ns
tHZOE
OE HIGH to High Z
[6, 7]
67
8
ns
tLZCE
CE1 LOW to Low Z, CE2 HIGH to Low Z
[7]
333
ns
tHZCE
CE1 HIGH to High Z, CE2 LOW to High Z
[6, 7]
67
8
ns
tPU
CE1 LOW to Power-Up, CE2 HIGH to Power-Up
0
ns
tPD
CE1 HIGH to Power-Down, CE2 LOW to Power-Down
12
15
20
ns
Write Cycle[8]
tWC
Write Cycle Time[9]
12
15
20
ns
tSCE
CE1 LOW to Write End, CE2 HIGH to Write End
10
12
15
ns
tAW
Address Set-Up to Write End
10
12
15
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
10
12
ns
tSD
Data Set-Up to Write End
7
8
10
ns
tHD
Data Hold from Write End
0
ns
tLZWE
WE HIGH to Low Z[7]
333
ns
tHZWE
WE LOW to High Z[6, 7]
67
8
ns
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
8. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. CE1 and WE must be LOW and CE2 HIGH to initiate a
write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the
signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C10191B | Memory |
| CY7C1002-20DMB | x4 SRAM |
| CY7C1002-20PC | x4 SRAM |
| CY7C1002-20VC | x4 SRAM |
| CY7C1002-25DMB | x4 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1009BN-12VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ |
| CY7C1009BN-12VCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ T/R |
| CY7C1009BN-15VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ |
| CY7C1009BN-15VI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube |
| CY7C1009D-10VXI | 功能描述:静态随机存取存储器 1M 512K IND FAST ASYNC 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。