参数资料
型号: CY7C1009B-20VXC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 128K X 8 STANDARD SRAM, 20 ns, PDSO32
封装: 0.300 INCH, LEAD FREE, SOJ-32
文件页数: 5/10页
文件大小: 362K
代理商: CY7C1009B-20VXC
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *C
Page 4 of 10
Data Retention Characteristics Over the Operating Range (Low Power version only)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0
V
ICCDR
Data Retention Current
150
A
tCDR
Chip Deselect to Data Retention Time
0
ns
tR
Operation Recovery Time
200
s
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[10, 11]
Read Cycle No. 2 (OE Controlled)[11, 12]
Notes:
10. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
4.5V
CE
VCC
tCDR
VDR > 2V
DATA RETENTION MODE
tR
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE1
ICC
ISB
IMPEDANCE
ADDRESS
CE2
DATA OUT
VCC
SUPPLY
CURRENT
相关PDF资料
PDF描述
CY7C10191B Memory
CY7C1002-20DMB x4 SRAM
CY7C1002-20PC x4 SRAM
CY7C1002-20VC x4 SRAM
CY7C1002-25DMB x4 SRAM
相关代理商/技术参数
参数描述
CY7C1009BN-12VC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ
CY7C1009BN-12VCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ T/R
CY7C1009BN-15VC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ
CY7C1009BN-15VI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube
CY7C1009D-10VXI 功能描述:静态随机存取存储器 1M 512K IND FAST ASYNC 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray