参数资料
型号: CY7C1148V18-333BZC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述: 1M X 18 DDR SRAM, 0.45 ns, PBGA165
封装: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件页数: 19/27页
文件大小: 969K
代理商: CY7C1148V18-333BZC
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Document Number: 001-06621 Rev. *C
Page 19 of 27
Power Up Sequence in DDR-II+ SRAM
During Power Up, when the DOFF is tied HIGH, the DLL gets
locked after 2048 cycles of stable clock. DDR-II+ SRAMs must
be powered up and initialized in a predefined manner to prevent
undefined operations.
Power Up Sequence
Apply power with DOFF tied HIGH (All other inputs can be
HIGH or LOW)
Apply V
DD
before V
DDQ
Apply V
DDQ
before V
REF
or at the same time as V
REF
Provide stable power and clock (K, K) for 2048 cycles to lock
the DLL.
DLL Constraints
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as t
KC Var
.
The DLL functions at frequencies down to 120 MHz.
If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 2048 cycles stable clock
to relock to the desired clock frequency.
Power Up Waveforms
Figure 5. Power Up Waveforms
K
K
Fix HIGH (tie to VDDQ)
VDD/VDDQ
DOFF
Clock Start (Clock Starts after VDD/VDDQ is Stable)
Unstable Clock
> 2048 Stable Clock
Start Normal
Operation
~
~
VDD/VDDQ Stable (< + 0.1V DC per 50 ns)
[+] Feedback
相关PDF资料
PDF描述
CY7C1148V18-333BZI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-333BZXC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-333BZXI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-375BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-375BZI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
相关代理商/技术参数
参数描述
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