参数资料
型号: CY7C1481V25-100BZXI
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
中文描述: 2M X 36 CACHE SRAM, 8.5 ns, PBGA165
封装: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件页数: 11/30页
文件大小: 1028K
代理商: CY7C1481V25-100BZXI
CY7C1481V25
CY7C1483V25
CY7C1487V25
Document #: 38-05281 Rev. *H
Page 11 of 30
Truth Table for Read/Write
The following is a Truth Table for Read/Write for the CY7C1481V25.
[3, 8]
Function
GW
BWE
BW
D
BW
C
BW
B
BW
A
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A (DQ
A
, DQP
A
)
Write Byte B(DQ
B
, DQP
B
)
Write Bytes A, B (DQ
A
, DQ
B
, DQP
A
, DQP
B
)
Write Byte C (DQ
C
, DQP
C
)
Write Bytes C, A (DQ
C
, DQ
A,
DQP
C
, DQP
A
)
Write Bytes C, B (DQ
C
, DQ
B,
DQP
C
, DQP
B
)
Write Bytes C, B, A (DQ
C
, DQ
B
, DQ
A,
DQP
C
, DQP
B
, DQP
A
)
Write Byte D (DQ
D
, DQP
D
)
Write Bytes D, A (DQ
D
, DQ
A,
DQP
D
, DQP
A
)
Write Bytes D, B (DQ
D
, DQ
A,
DQP
D
, DQP
A
)
Write Bytes D, B, A (DQ
D
, DQ
B
, DQ
A,
DQP
D
, DQP
B
, DQP
A
)
Write Bytes D, B (DQ
D
, DQ
B,
DQP
D
, DQP
B
)
Write Bytes D, B, A (DQ
D
, DQ
C
, DQ
A,
DQP
D
, DQP
C
, DQP
A
)
Write Bytes D, C, A (DQ
D
, DQ
B
, DQ
A,
DQP
D
, DQP
B
, DQP
A
)
Write All Bytes
H
L
H
H
H
L
H
L
H
H
L
H
H
L
H
H
L
L
H
L
H
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
H
L
H
L
L
L
H
L
L
H
H
H
H
L
L
H
H
L
H
L
L
H
L
H
H
L
L
H
L
L
H
L
L
L
H
H
H
L
L
L
H
L
H
L
L
L
L
H
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Truth Table for Read/Write
The following is a Truth Table for Read/Write for the CY7C1481V25.
[3, 8]
Function (CY7C1483V25)
GW
BWE
BW
B
BW
A
Read
H
H
X
X
Read
H
L
H
H
Write Byte A - (DQ
A
and DQP
A
)
Write Byte B - (DQ
B
and DQP
B
)
Write All Bytes
H
L
H
L
H
L
L
H
H
L
L
L
Write All Bytes
Truth Table for Read/Write
The following is a Truth Table for Read/Write for the CY7C1481V25.
[3, 8]
L
X
X
X
Function (CY7C1487V25)
GW
BWE
BW
x
[9]
X
Read
H
H
Read
H
L
All BW = H
Write Byte x – (DQ
x
and DQP
x
)
Write All Bytes
H
L
L
H
L
All BW = L
Write All Bytes
L
X
X
Notes
8. Table only includes a partial listing of the byte write combinations. Any combination of BW
is valid. Appropriate write is done based on which byte write is active.
9. BW
represents any byte write signal BW
. To enable any byte write BW
x,
a Logic LOW signal must be applied at clock rise. Any number of byte writes can be
enabled at the same time for any given write.
[+] Feedback
相关PDF资料
PDF描述
CY7C1481V25-133AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
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