参数资料
型号: CY7C1481V25-100BZXI
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
中文描述: 2M X 36 CACHE SRAM, 8.5 ns, PBGA165
封装: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件页数: 14/30页
文件大小: 1028K
代理商: CY7C1481V25-100BZXI
CY7C1481V25
CY7C1483V25
CY7C1487V25
Document #: 38-05281 Rev. *H
Page 14 of 30
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that because the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
TAP AC Switching Characteristics
Over the Operating Range
[10, 11]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Setup Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Description
Min
Max
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
ns
20
20
20
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
10
ns
ns
0
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
ns
ns
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
Notes
10.t
and t
refer to the setup and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC Test Conditions. t
R
/t
F
= 1 ns.
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相关PDF资料
PDF描述
CY7C1481V25-133AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
CY7C1481V25-133BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
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