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参数资料
| 型号： | D18754EJ1V0DS00 |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 2/8页 |
| 文件大小： | 285K |
| 代理商： | D18754EJ1V0DS00 |
Data Sheet D18754EJ1V0DS
2
NP160N04TUG
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
3.0
4.0
V
| y
fs
|
V
DS
= 5 V, I
D
= 40 A
28
76
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 80 A
1.6
2.0
m
Ω
Input Capacitance
C
iss
V
DS
= 25 V,
10500
15750
pF
Output Capacitance
C
oss
V
GS
= 0 V,
980
1470
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
630
1140
pF
Turn-on Delay Time
t
d(on)
V
DD
= 20 V, I
D
= 80 A,
47
110
ns
Rise Time
t
r
V
GS
= 10 V,
67
170
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
Ω
94
190
ns
Fall Time
t
f
19
50
ns
Total Gate Charge
Note
Q
G
V
DD
= 32 V,
178
270
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
44
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 160 A
61
nC
V
F(S-D)
I
F
= 160 A, V
GS
= 0 V
0.92
1.5
V
Reverse Recovery Time
t
rr
I
F
= 160 A, V
GS
= 0 V,
50
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
75
nC
Note
Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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