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参数资料
| 型号： | D18754EJ1V0DS00 |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 6/8页 |
| 文件大小： | 285K |
| 代理商： | D18754EJ1V0DS00 |
Data Sheet D18754EJ1V0DS
6
NP160N04TUG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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