参数资料
型号: DAC1008D650HN
厂商: NXP Semiconductors N.V.
元件分类: 外设及接口
英文描述: Dual 10-bit DAC; up to 650 Msps; 2×, 4× or 8× interpolating
封装: DAC1008D650HN/C1<SOT804-3|<<<1<Always Pb-free,;DAC1008D650HN/C1<SOT804-3|<<<1<Always Pb-free,;
文件页数: 7/98页
文件大小: 551K
代理商: DAC1008D650HN
DAC1008D650
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 December 2010
7 of 98
NXP Semiconductors
DAC1008D650
2
×
, 4
×
or 8
×
interpolating DAC with JESD204A
9. Characteristics
Table 5.
V
DDA(1V8)
= V
DDD
= 1.7 V to 1.9 V; V
DDA(3V3)
= 3.13 V to 3.47 V; AGND and GND are shorted together; T
amb
=
40
°
C to
+85
°
C; typical values measured at V
DDA(1V8)
= V
DDD
= 1.8 V; V
DDA(3V3)
= 3.3 V; T
amb
= +25
°
C; R
L
= 50
Ω
; I
O(fs)
= 20 mA;
maximum sample rate; PLL off unless otherwise specified.
Symbol
Parameter
Conditions
V
DDA(3V3)
analog supply voltage
(3.3 V)
V
DDD(1V8)
digital supply voltage
(1.8 V)
V
DDA(1V8)
analog supply voltage
(1.8 V)
I
DDA(3V3)
analog supply current
(3.3 V)
4
×
interpolation; NCO on
I
DDD(1V8)
digital supply current
(1.8 V)
4
×
interpolation; NCO on
I
DDA(1V8)
analog supply current
(1.8 V)
4
×
interpolation; NCO on
Δ
I
DDD
digital supply current
difference
f
s
= 640 Msps
P
tot
total power dissipation
f
s
= 640 Msps;
4
×
interpolation; NCO off;
DAC Q off
f
s
= 640 Msps;
4
×
interpolation; NCO off
f
s
= 640 Msps;
4
×
interpolation; NCO on
f
s
= 625 Msps;
2
×
interpolation; NCO off
f
s
= 625 Msps;
2
×
interpolation; NCO on
Power-down mode;
f
o
= 19 MHz; f
s
= 640 Msps;
4
×
interpolation; NCO on
complete device;
Power-down mode
DAC A and DAC B;
Power-down mode
DAC A and DAC B;
Sleep mode
Timing specifications
t
d(startup)
start-up delay time
from full Power-down mode
t
d(restart)
restart delay time
from Sleep mode
t
lock
lock time
maximum input rate
Clock inputs (CLKINN, CLKINP)
[3]
V
i
input voltage
range: CLK+ or CLK
|
V
gpd
|
< 50 mV
[4]
Characteristics
Test
[1]
I
Min
3.13
Typ
3.3
Max
3.47
Unit
V
I
1.7
1.8
1.9
V
I
1.7
1.8
1.9
V
f
o
= 19 MHz; f
s
= 640 Msps;
I
-
41
-
mA
f
o
= 19 MHz; f
s
= 640 Msps;
I
-
356
-
mA
f
o
= 19 MHz; f
s
= 640 Msps;
I
-
373
-
mA
x/sin x function on;
I
-
48
-
mA
C
-
0.75
-
W
C
-
1.20
-
W
C
-
1.45
-
W
C
-
1.29
-
W
C
-
1.46
-
W
I
-
0.04
-
W
I
-
0.58
-
W
I
-
0.75
-
W
D
D
D
-
-
20
300
11
-
-
-
ms
ns
μ
s
[2]
-
C
825
-
1575
mV
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