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参数资料
| 型号： | DAC8551IADGKR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | DAC |
| 英文描述： | SERIAL INPUT LOADING, 12 us SETTLING TIME, 16-BIT DAC, PDSO8 |
| 封装： | GREEN, PLASTIC, MSOP-8 |
| 文件页数： | 5/24页 |
| 文件大小： | 456K |
| 代理商： | DAC8551IADGKR |
www.ti.com
Time(2 s/div)
m
V
=2.7V
V
=2.5V
FromCode:CFFF
ToCode:4000
DD
REF
TriggerPulse2.7V/div
ZoomedFallingEdge
1mV/div
Falling
Edge
0.5V/div
Time(400ns/div)
V
=2.7V
V
=2.5V
FromCode:7FFF
ToCode:8000
Glitch:0.08nV-s
DD
REF
V
(200
V/div)
m
O
U
T
Time(400ns/div)
V
=2.7V
V
=2.5V
FromCode:8000
ToCode:7FFF
Glitch:0.16nV-s
MeasuredWorstCase
DD
REF
V
(200
V/div)
m
O
U
T
Time(400ns/div)
V
=2.7V
V
=2.5V
FromCode:8000
ToCode:8010
Glitch:0.04nV-s
DD
REF
V
(200
V/div)
m
O
U
T
Time(400ns/div)
V
=2.7V
V
=2.5V
FromCode:8010
ToCode:8000
Glitch:0.12nV-s
DD
REF
V
(200
V/div)
m
O
U
T
Time(400ns/div)
V
=2.7V
V
=2.5V
FromCode:8000
ToCode:80FF
Glitch:NotDetected
TheoreticalWorstCase
DD
REF
V
(5mV/div)
O
U
T
SLAS429B – APRIL 2005 – REVISED OCTOBER 2006
TYPICAL CHARACTERISTICS: V
DD = 2.7 V (continued)
At T
A = +25°C, unless otherwise noted.
HALF-SCALE SETTLING TIME: 2.7V FALLING EDGE
GLITCH ENERGY: 2.7V, 1LSB STEP, RISING EDGE
Figure 38.
Figure 39.
GLITCH ENERGY: 2.7V, 1LSB STEP, FALLING EDGE
GLITCH ENERGY: 2.7V, 16LSB STEP, RISING EDGE
Figure 40.
Figure 41.
GLITCH ENERGY: 2.7V, 16LSB STEP, FALLING EDGE
GLITCH ENERGY: 2.7V, 256LSB STEP, RISING EDGE
Figure 42.
Figure 43.
13
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| DAC8551IADGKRG4 | 功能描述:数模转换器- DAC 16B Ultralow Glitch Vltg Output DAC RoHS:否 制造商:Texas Instruments 转换器数量:1 DAC 输出端数量:1 转换速率:2 MSPs 分辨率:16 bit 接口类型:QSPI, SPI, Serial (3-Wire, Microwire) 稳定时间:1 us 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-14 封装:Tube |
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| DAC8551IDGKR | 功能描述:数模转换器- DAC 16-Bit UltrLo Glitch Vltg Output RoHS:否 制造商:Texas Instruments 转换器数量:1 DAC 输出端数量:1 转换速率:2 MSPs 分辨率:16 bit 接口类型:QSPI, SPI, Serial (3-Wire, Microwire) 稳定时间:1 us 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-14 封装:Tube |
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