参数资料
型号: DAN235ETL
厂商: Rohm Semiconductor
文件页数: 2/4页
文件大小: 337K
描述: DIODE SWITCH BAND 35V 3EMD TR
标准包装: 1
二极管类型: 标准 - 1 对共阴极
电压 - 峰值反向(最大): 35V
电容@ Vr, F: 1.2pF @ 6V,1MHz
电阻@ Vr, F: 900 毫欧 @ 2mA,100MHz
功率耗散(最大): 150mW
封装/外壳: SC-75,SOT-416
供应商设备封装: EMD3
包装: 标准包装
其它名称: DAN235ETLDKR
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN235E
0
20
40
60
80
100
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(Ω)
0.01
0.1
1
10
100
0 0.10.20.30.40.50.60.70.80.9 1 1.1
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
0.1
1
10
0 5 10 15 20 25 30
f=1MHz
810
820
830
840
850
860
AVE:834.0mV
Ta=25℃
IF=10mA
n=30pcs
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Ta=25℃
VR=25V
n=30pcs
AVE:0.0285nA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.865pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:4.60A
AVE:64.7ns
Ta=25℃
IF=0.1A
IR=0.1A
RL=100Ω
Irr=0.1*IR
n=10pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.630Ω
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
0.1
1
10
100
1101000.1
0.1
1
10
100
1
10
100
t
Ifsm
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
8.3ms
Ifsm
1cyc
8.3ms
8.3ms
Ifsm
1cyc
2/3
2011.06 - Rev.C
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